18509468. THIN FILM TRANSISTOR, METHOD FOR MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE simplified abstract (SEMICONDUCTOR ENERGY LABORATORY CO., LTD.)
Contents
- 1 THIN FILM TRANSISTOR, METHOD FOR MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 THIN FILM TRANSISTOR, METHOD FOR MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
THIN FILM TRANSISTOR, METHOD FOR MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE
Organization Name
SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor(s)
Toshikazu Kondo of Atsugi (JP)
Hideyuki Kishida of Atsugi (JP)
THIN FILM TRANSISTOR, METHOD FOR MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18509468 titled 'THIN FILM TRANSISTOR, METHOD FOR MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE
Simplified Explanation
The abstract describes a patent application for a thin film transistor with a buffer layer to prevent an increase in off current or negative shift of the threshold voltage. The buffer layer includes a metal oxide layer that acts as a protective layer to suppress impurities from entering the oxide semiconductor layer.
- Metal oxide layer in the buffer layer prevents impurities from incorporating into the oxide semiconductor layer.
- Buffer layer is placed between the oxide semiconductor layer and the source/drain electrode layers to prevent off current increase or negative shift of threshold voltage.
Potential Applications
The technology can be applied in various electronic devices such as displays, sensors, and integrated circuits where thin film transistors are used.
Problems Solved
1. Prevention of off current increase in thin film transistors. 2. Avoiding negative shift of the threshold voltage.
Benefits
1. Improved performance and reliability of thin film transistors. 2. Enhanced stability and longevity of electronic devices utilizing this technology.
Potential Commercial Applications
Optimizing thin film transistors for use in smartphones, tablets, TVs, and other consumer electronics.
Possible Prior Art
Prior art may include patents or research related to thin film transistors with buffer layers for impurity suppression and performance enhancement.
Unanswered Questions
How does the metal oxide layer specifically prevent impurities from entering the oxide semiconductor layer?
The metal oxide layer acts as a protective barrier, blocking impurities from diffusing into the oxide semiconductor layer. It effectively shields the semiconductor layer from contamination, ensuring its performance and stability.
What are the specific electronic devices that can benefit the most from this technology?
Electronic devices that heavily rely on thin film transistors, such as OLED displays, touchscreens, and image sensors, can greatly benefit from the improved performance and reliability offered by this technology.
Original Abstract Submitted
In a thin film transistor, an increase in off current or negative shift of the threshold voltage is prevented. In the thin film transistor, a buffer layer is provided between an oxide semiconductor layer and each of a source electrode layer and a drain electrode layer. The buffer layer includes a metal oxide layer which is an insulator or a semiconductor over a middle portion of the oxide semiconductor layer. The metal oxide layer functions as a protective layer for suppressing incorporation of impurities into the oxide semiconductor layer. Therefore, in the thin film transistor, an increase in off current or negative shift of the threshold voltage can be prevented.
