18507957. SEMICONDUCTOR DEVICE AND FORMING METHOD THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)

SEMICONDUCTOR DEVICE AND FORMING METHOD THEREOF

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor(s)

Miin-Jang Chen of Taipei City (TW)

Sheng-Han Yi of Taipei City (TW)

Chen-Hsuan Lu of Taipei City (TW)

SEMICONDUCTOR DEVICE AND FORMING METHOD THEREOF - A simplified explanation of the abstract

This abstract first appeared for US patent application 18507957 titled 'SEMICONDUCTOR DEVICE AND FORMING METHOD THEREOF

Simplified Explanation

The method described in the patent application involves the formation of source/drain regions in a semiconductor substrate, depositing a zirconium-containing oxide layer over a channel region in the semiconductor substrate and between the source/drain region, forming a titanium oxide layer in contact with the zirconium-containing oxide layer, and forming a top electrode over the zirconium-containing oxide layer without performing any annealing after depositing the zirconium-containing oxide layer and prior to forming the top electrode.

• Formation of source/drain regions in a semiconductor substrate
• Deposition of a zirconium-containing oxide layer over a channel region in the semiconductor substrate
• Formation of a titanium oxide layer in contact with the zirconium-containing oxide layer
• Formation of a top electrode over the zirconium-containing oxide layer without annealing

Potential Applications

This technology could be applied in the manufacturing of advanced semiconductor devices, such as memory chips and processors.

Problems Solved

1. Improved performance and reliability of semiconductor devices. 2. Enhanced integration of different materials in semiconductor structures.

Benefits

1. Increased efficiency in semiconductor manufacturing processes. 2. Enhanced functionality and durability of semiconductor devices. 3. Potential for cost savings in production.

Original Abstract Submitted

A method includes forming source/drain regions in a semiconductor substrate; depositing a zirconium-containing oxide layer over a channel region in the semiconductor substrate and between the source/drain region; forming a titanium oxide layer in contact with the zirconium-containing oxide layer; forming a top electrode over the zirconium-containing oxide layer, wherein no annealing is performed after depositing the zirconium-containing oxide layer and prior to forming the top electrode.