18507459. WAFER PROCESSING APPARATUS AND WAFER DICING METHOD simplified abstract (Samsung Electronics Co., Ltd.)
Contents
- 1 WAFER PROCESSING APPARATUS AND WAFER DICING METHOD
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 WAFER PROCESSING APPARATUS AND WAFER DICING METHOD - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
WAFER PROCESSING APPARATUS AND WAFER DICING METHOD
Organization Name
Inventor(s)
Youngchul Kwon of Suwon-si (KR)
WAFER PROCESSING APPARATUS AND WAFER DICING METHOD - A simplified explanation of the abstract
This abstract first appeared for US patent application 18507459 titled 'WAFER PROCESSING APPARATUS AND WAFER DICING METHOD
Simplified Explanation
The wafer processing apparatus described in the patent application utilizes a laser source to generate a laser beam with specific parameters, which is then transferred to the wafer through a beam transmission optical system. The laser beam is designed to be collected inside the wafer by a self-condensing phenomenon as it moves along the inside of the wafer.
- Laser source generates laser beam with specific parameters
- Beam transmission optical system transfers laser beam to wafer
- Laser beam collected inside wafer by self-condensing phenomenon
Potential Applications
This technology could be used in the semiconductor industry for precise and efficient processing of wafers, such as cutting, drilling, or marking.
Problems Solved
This technology solves the problem of achieving precise and controlled laser processing within a wafer by utilizing a self-condensing phenomenon.
Benefits
The benefits of this technology include improved accuracy, efficiency, and control in wafer processing, leading to higher quality end products.
Potential Commercial Applications
"Advanced Laser Wafer Processing Technology for Semiconductor Industry"
Possible Prior Art
There may be prior art related to laser processing of wafers in the semiconductor industry, but the specific self-condensing phenomenon described in this patent application may be a novel approach.
Unanswered Questions
How does this technology compare to traditional wafer processing methods?
This article does not provide a direct comparison between this technology and traditional wafer processing methods. Further research or testing may be needed to evaluate the effectiveness and efficiency of this new approach.
What are the limitations of this technology in terms of wafer size and material compatibility?
The article does not address the potential limitations of this technology in terms of wafer size and material compatibility. Understanding these limitations could help determine the scope of applications for this technology.
Original Abstract Submitted
Provided is a wafer processing apparatus including a laser source for generating a laser beam including a plurality of pulses, a wafer support configured to support a wafer, and a beam transmission optical system for transferring the laser beam output from the laser source to the wafer, wherein the laser source sets parameters of the laser beam so that the laser beam is collected inside the wafer by a self-condensing phenomenon while moving along the inside of the wafer.
