18507387. MEMORY READ VOLTAGE THRESHOLD TRACKING BASED ON MEMORY DEVICE-ORIGINATED METRICS CHARACTERIZING VOLTAGE DISTRIBUTIONS simplified abstract (Micron Technology, Inc.)

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MEMORY READ VOLTAGE THRESHOLD TRACKING BASED ON MEMORY DEVICE-ORIGINATED METRICS CHARACTERIZING VOLTAGE DISTRIBUTIONS

Organization Name

Micron Technology, Inc.

Inventor(s)

Shantilal Rayshi Doru of San Diego CA (US)

Patrick R. Khayat of San Diego CA (US)

Steven Michael Kientz of Westminster CO (US)

Sampath K. Ratnam of San Jose CA (US)

Dung Viet Nguyen of San Jose CA (US)

MEMORY READ VOLTAGE THRESHOLD TRACKING BASED ON MEMORY DEVICE-ORIGINATED METRICS CHARACTERIZING VOLTAGE DISTRIBUTIONS - A simplified explanation of the abstract

This abstract first appeared for US patent application 18507387 titled 'MEMORY READ VOLTAGE THRESHOLD TRACKING BASED ON MEMORY DEVICE-ORIGINATED METRICS CHARACTERIZING VOLTAGE DISTRIBUTIONS

Simplified Explanation

The patent application describes systems and methods for memory read threshold tracking based on voltage distributions in memory cells.

  • Memory device tracks voltage distributions in memory cells
  • Controller adjusts voltage threshold values based on received metrics
  • Adjusted threshold values used for reading memory cells

Potential Applications

This technology could be applied in:

  • Solid-state drives
  • Embedded systems
  • Mobile devices

Problems Solved

This technology helps in:

  • Improving memory read accuracy
  • Enhancing memory cell performance

Benefits

The benefits of this technology include:

  • Increased data reliability
  • Enhanced memory device lifespan

Potential Commercial Applications

The potential commercial applications of this technology include:

  • Memory device manufacturing
  • Data storage industry

Possible Prior Art

One possible prior art related to this technology is:

  • Memory read threshold tracking based on temperature variations

Unanswered Questions

How does this technology impact memory device speed?

This technology can potentially improve memory device speed by optimizing voltage threshold values for memory cell read operations.

What are the potential cost implications of implementing this technology?

The cost implications of implementing this technology may include additional manufacturing costs for memory devices with advanced tracking capabilities.


Original Abstract Submitted

Described are systems and methods for memory read threshold tracking based on memory device-originated metrics characterizing voltage distributions. An example memory device includes: a memory array having a plurality of memory cells and a controller coupled to the memory array. The controller is to perform operations including: receiving a first value of a metric characterizing threshold voltage distributions of a subset of a set of the plurality of memory cells; determining a first voltage threshold adjustment value; receiving a second value of the metric; determining a second voltage threshold adjustment value; and applying the second voltage threshold adjustment value for reading the set of the plurality of memory cells.