18504760. SEMICONDUCTOR DEVICE AND ELECTRONIC APPARATUS INCLUDING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
Contents
- 1 SEMICONDUCTOR DEVICE AND ELECTRONIC APPARATUS INCLUDING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICE AND ELECTRONIC APPARATUS INCLUDING THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
SEMICONDUCTOR DEVICE AND ELECTRONIC APPARATUS INCLUDING THE SAME
Organization Name
Inventor(s)
SEMICONDUCTOR DEVICE AND ELECTRONIC APPARATUS INCLUDING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18504760 titled 'SEMICONDUCTOR DEVICE AND ELECTRONIC APPARATUS INCLUDING THE SAME
Simplified Explanation
The semiconductor device described in the patent application includes a ferroelectric layer with crystal grains having specific crystal orientations, arranged between a semiconductor layer and an electrode.
- The semiconductor device comprises a semiconductor layer, an electrode, and a ferroelectric layer.
- The ferroelectric layer consists of crystal grains with specific crystal orientations aligned within angle ranges with respect to different directions.
Potential Applications
The technology described in the patent application could be applied in:
- Memory devices
- Sensors
- Non-volatile memory storage
Problems Solved
This technology addresses issues related to:
- Data retention in memory devices
- Sensing capabilities in electronic devices
- Energy efficiency in electronic systems
Benefits
The benefits of this technology include:
- Improved data retention in memory devices
- Enhanced sensing performance in electronic devices
- Increased energy efficiency in electronic systems
Potential Commercial Applications
The potential commercial applications of this technology could be in:
- Consumer electronics
- Automotive systems
- Industrial automation
Possible Prior Art
One possible prior art related to this technology is the use of ferroelectric materials in memory devices for data storage applications.
What are the specific crystal orientations of the crystal grains in the ferroelectric layer?
The specific crystal orientations of the crystal grains in the ferroelectric layer are aligned within angle ranges with respect to different directions, providing unique properties to the material.
How does the alignment of crystal orientations in the ferroelectric layer impact the performance of the semiconductor device?
The alignment of crystal orientations in the ferroelectric layer can influence the polarization properties, switching behavior, and overall functionality of the semiconductor device, affecting its performance in memory storage, sensing, and energy efficiency applications.
Original Abstract Submitted
Provided are a semiconductor device including a ferroelectric and an electronic apparatus including the semiconductor device. The semiconductor device includes a semiconductor layer, an electrode apart from the semiconductor layer, and a ferroelectric layer arranged between the semiconductor layer and the electrode. The ferroelectric layer includes a plurality of crystal grains, each of which having a first crystal orientation aligned within an angle range with respect to a first direction and having a second crystal orientation aligned within an angle range with respect to a second direction that is different from the first direction.
