18504479. SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
Contents
- 1 SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
Organization Name
Inventor(s)
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18504479 titled 'SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
Simplified Explanation
The semiconductor device described in the abstract includes a substrate with a cell disposing region and a first block border region, gate electrodes on the cell disposing region extending to the first block border region, and a first connection structure on the first block border region physically connecting adjacent gate electrodes.
- Substrate with cell disposing region and first block border region
- Plurality of gate electrodes extending from cell disposing region to first block border region
- Gate electrodes include first and second gate electrode
- First connection structure physically connecting first and second gate electrodes
Potential Applications
The technology described in this patent application could be applied in the semiconductor industry for the fabrication of advanced semiconductor devices with improved performance and efficiency.
Problems Solved
This technology solves the problem of efficiently connecting adjacent gate electrodes in a semiconductor device, ensuring proper functionality and performance.
Benefits
The benefits of this technology include enhanced reliability, improved electrical connectivity, and increased overall performance of semiconductor devices.
Potential Commercial Applications
The technology could be utilized in the production of various semiconductor devices such as microprocessors, memory chips, and integrated circuits, leading to more advanced and efficient electronic products.
Possible Prior Art
One possible prior art could be the use of traditional connection structures in semiconductor devices, which may not provide the same level of efficiency and performance as the new connection structure described in this patent application.
Unanswered Questions
How does this technology compare to existing methods of connecting gate electrodes in semiconductor devices?
This article does not provide a direct comparison between this technology and existing methods, leaving the reader to wonder about the specific advantages and disadvantages of the new connection structure.
What specific improvements in performance can be expected from implementing this technology in semiconductor devices?
The article does not delve into the specific performance enhancements that can be achieved by using this new connection structure, leaving room for speculation on the potential benefits for semiconductor devices.
Original Abstract Submitted
Disclosed are a semiconductor device and a method of fabricating the same. The semiconductor device includes a substrate including a cell disposing region and a first block border region, a plurality of gate electrodes on the cell disposing region and extending to the first block border region in a first direction to be parallel to each other, the gate electrodes including a first and second gate electrode, which are adjacent to each other, and a first connection structure on the first block border region, wherein the first connection structure is configured to physically connect the first and second gate electrodes to each other.
