18504046. SOLID-STATE IMAGING DEVICE AND MANUFACTURING METHOD THEREFOR simplified abstract (CANON KABUSHIKI KAISHA)

SOLID-STATE IMAGING DEVICE AND MANUFACTURING METHOD THEREFOR

Organization Name

CANON KABUSHIKI KAISHA

Inventor(s)

Mineo Shimotsusa of Machida-shi (JP)

Fumihiro Inui of Yokohama-shi (JP)

SOLID-STATE IMAGING DEVICE AND MANUFACTURING METHOD THEREFOR - A simplified explanation of the abstract

This abstract first appeared for US patent application 18504046 titled 'SOLID-STATE IMAGING DEVICE AND MANUFACTURING METHOD THEREFOR

Simplified Explanation

The patent application describes a solid-state imaging device with first and second pixel regions, each containing specific components such as photoelectric conversion units, transistors, and isolation portions.

• First pixel region includes photoelectric conversion unit, floating diffusion region, and transferring transistor.
• Second pixel region includes amplifying transistor and resetting transistor.
• First element isolation portion is in the first pixel region, while second element isolation portion is in the second pixel region.
• Insulating film protrusion into semiconductor substrate is smaller in the first element isolation portion compared to the second element isolation portion.

---

1. 1. 1. Potential Applications

• Digital cameras
• Smartphone cameras
• Surveillance cameras
• Medical imaging devices

1. 1. 1. Problems Solved

• Improved image quality
• Enhanced pixel isolation
• Reduced crosstalk between pixels

1. 1. 1. Benefits

• Higher resolution images
• Better low-light performance
• Increased sensitivity
• Improved overall image quality

Original Abstract Submitted

A solid-state imaging device includes a first and second pixel regions. In the first pixel region, a photoelectric conversion unit, a floating diffusion region (FD), and a transferring transistor are provided. In the second pixel region, an amplifying transistor, and a resetting transistor are provided. A first element isolation portion is provided in the first pixel region, while a second element isolation portion is provided in the second pixel region. An amount of protrusion of an insulating film into a semiconductor substrate in the first element isolation portion is smaller, than that in the second element isolation portion.