18504046. SOLID-STATE IMAGING DEVICE AND MANUFACTURING METHOD THEREFOR simplified abstract (CANON KABUSHIKI KAISHA)

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SOLID-STATE IMAGING DEVICE AND MANUFACTURING METHOD THEREFOR

Organization Name

CANON KABUSHIKI KAISHA

Inventor(s)

Mineo Shimotsusa of Machida-shi (JP)

Fumihiro Inui of Yokohama-shi (JP)

SOLID-STATE IMAGING DEVICE AND MANUFACTURING METHOD THEREFOR - A simplified explanation of the abstract

This abstract first appeared for US patent application 18504046 titled 'SOLID-STATE IMAGING DEVICE AND MANUFACTURING METHOD THEREFOR

Simplified Explanation

The patent application describes a solid-state imaging device with first and second pixel regions, each containing specific components such as photoelectric conversion units, transistors, and isolation portions.

  • First pixel region includes photoelectric conversion unit, floating diffusion region, and transferring transistor.
  • Second pixel region includes amplifying transistor and resetting transistor.
  • First element isolation portion is in the first pixel region, while second element isolation portion is in the second pixel region.
  • Insulating film protrusion into semiconductor substrate is smaller in the first element isolation portion compared to the second element isolation portion.

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      1. Potential Applications
  • Digital cameras
  • Smartphone cameras
  • Surveillance cameras
  • Medical imaging devices
      1. Problems Solved
  • Improved image quality
  • Enhanced pixel isolation
  • Reduced crosstalk between pixels
      1. Benefits
  • Higher resolution images
  • Better low-light performance
  • Increased sensitivity
  • Improved overall image quality


Original Abstract Submitted

A solid-state imaging device includes a first and second pixel regions. In the first pixel region, a photoelectric conversion unit, a floating diffusion region (FD), and a transferring transistor are provided. In the second pixel region, an amplifying transistor, and a resetting transistor are provided. A first element isolation portion is provided in the first pixel region, while a second element isolation portion is provided in the second pixel region. An amount of protrusion of an insulating film into a semiconductor substrate in the first element isolation portion is smaller, than that in the second element isolation portion.