18504007. WAFER CHUCK, METHOD FOR PRODUCING THE SAME, AND EXPOSURE APPARATUS simplified abstract (CANON KABUSHIKI KAISHA)
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WAFER CHUCK, METHOD FOR PRODUCING THE SAME, AND EXPOSURE APPARATUS
Organization Name
Inventor(s)
Keiji Hirabayashi of Tokyo (JP)
WAFER CHUCK, METHOD FOR PRODUCING THE SAME, AND EXPOSURE APPARATUS - A simplified explanation of the abstract
This abstract first appeared for US patent application 18504007 titled 'WAFER CHUCK, METHOD FOR PRODUCING THE SAME, AND EXPOSURE APPARATUS
Simplified Explanation
The wafer chuck described in the patent application is made of a ceramic containing silicon carbide, with an oxidation-treated layer on the base and a diamond-like carbon (DLC) film on the outermost surface.
- The base of the wafer chuck is made of a ceramic material that includes silicon carbide.
- An oxidation-treated layer is applied to the base to enhance its durability and resistance to wear.
- A film made of diamond-like carbon (DLC) is formed on the outermost surface of the base to further improve its performance and longevity.
Potential Applications
- Semiconductor manufacturing
- Wafer processing
- Thin film deposition
Problems Solved
- Improved durability and wear resistance of wafer chucks
- Enhanced performance in semiconductor manufacturing processes
Benefits
- Extended lifespan of wafer chucks
- Increased efficiency in wafer processing
- Reduced maintenance and replacement costs
Original Abstract Submitted
A wafer chuck includes a base made of a ceramic containing silicon carbide. The base has an oxidation-treated layer, and a film made of diamond-like carbon (DLC) is formed on an outermost surface of the base.
