18503479. METHOD AND DEVICE FOR OPERATING A MEMORY DEVICE simplified abstract (Robert Bosch GmbH)

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METHOD AND DEVICE FOR OPERATING A MEMORY DEVICE

Organization Name

Robert Bosch GmbH

Inventor(s)

Taha Soliman of Renningen (DE)

Tobias Kirchner of Ludwigsburg (DE)

METHOD AND DEVICE FOR OPERATING A MEMORY DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18503479 titled 'METHOD AND DEVICE FOR OPERATING A MEMORY DEVICE

Simplified Explanation

The abstract describes a method for operating a memory device with a bistable multivibrator and access transistors. The method involves controlling the connection of the bistable multivibrator to secondary control lines using a primary control line, applying a control signal to the access transistors, and determining a variable characterizing current flow through the access transistors.

  • The memory device includes at least one memory unit with a bistable multivibrator and access transistors.
  • The bistable multivibrator is connected to secondary control lines via access transistors controlled by a primary control line.
  • A control signal is applied to the access transistors to control the electrical conductivity of the load path.
  • A variable is determined to characterize the current flowing through the access transistors.

Potential Applications

This technology could be applied in:

  • Memory devices
  • Data storage systems
  • Integrated circuits

Problems Solved

This technology helps in:

  • Efficiently controlling memory units
  • Optimizing current flow in memory devices
  • Enhancing data storage capabilities

Benefits

The benefits of this technology include:

  • Improved memory device performance
  • Enhanced data processing speed
  • Increased reliability of memory units

Potential Commercial Applications

A potential commercial application for this technology could be:

  • Memory device manufacturing industry

Possible Prior Art

One possible prior art for this technology could be:

  • Previous methods of controlling memory unit connections

Unanswered Questions

How does this method compare to existing memory device operation techniques?

This article does not provide a direct comparison to existing memory device operation techniques. Further research or a comparative study would be needed to address this question.

What are the specific parameters used to determine the variable characterizing current flow through the access transistors?

The article does not specify the exact parameters used to determine the variable characterizing current flow through the access transistors. Additional details or experimentation may be required to answer this question accurately.


Original Abstract Submitted

A method for operating a memory device comprising at least one memory unit. The at least one memory unit includes a bistable multivibrator and two access transistors for the controllable connection of the bistable multivibrator to two secondary control lines associated with the at least one memory unit. The connection of the bistable multivibrator to the two secondary control lines can be controlled using a first primary control line. The method includes: applying a control signal to a control terminal of at least one of the two access transistors in such a way that a load path of the at least one access transistor is at least partially electrically conductive, with respect to a high-resistance state of the load path of the at least one access transistor; determining a first variable which characterizes at least one current flowing through the load path of the at least one access transistor.