18502777. PHOTO-DETECTION APPARATUS AND PHOTO-DETECTION SYSTEM simplified abstract (CANON KABUSHIKI KAISHA)
Contents
PHOTO-DETECTION APPARATUS AND PHOTO-DETECTION SYSTEM
Organization Name
Inventor(s)
Kazuhiro Morimoto of Neuchâtel (CH)
Mahito Shinohara of Tokyo (JP)
PHOTO-DETECTION APPARATUS AND PHOTO-DETECTION SYSTEM - A simplified explanation of the abstract
This abstract first appeared for US patent application 18502777 titled 'PHOTO-DETECTION APPARATUS AND PHOTO-DETECTION SYSTEM
Simplified Explanation
The patent application describes an apparatus involving overlapping semiconductor regions of different conductivity types and potentials.
- First semiconductor region of a first conductivity type overlaps at least a portion of a third semiconductor region
- Second semiconductor region overlaps at least a portion of a fourth semiconductor region of a second conductivity type
- Height of potential of the third semiconductor region is lower than that of the fourth semiconductor region
- Difference in potential height between the first and third semiconductor regions is larger than that between the second and fourth semiconductor regions
- Potential Applications
- Semiconductor devices
- Integrated circuits
- Power electronics
- Problems Solved
- Efficient charge carrier transport
- Enhanced performance of semiconductor devices
- Reduction of power consumption
- Benefits
- Improved device efficiency
- Enhanced device performance
- Lower power consumption
Original Abstract Submitted
An apparatus wherein, in plane view, a first semiconductor region of a first conductivity type overlaps at least a portion of a third semiconductor region, a second semiconductor region overlaps at least a portion of a fourth semiconductor region of a second conductivity type, a height of a potential of the third semiconductor region with respect to an electric charge of the first conductivity type is lower than that of the fourth semiconductor region, and a difference between a height of a potential of the first semiconductor region and that of the third semiconductor region is larger than a difference between a height of a potential of the second semiconductor region and that of the fourth semiconductor region.
