18502764. EFFECTIVE STORAGE ALLOCATION FOR SEQUENTIALLY-WRITTEN MEMORY DEVICES simplified abstract (Micron Technology, Inc.)
EFFECTIVE STORAGE ALLOCATION FOR SEQUENTIALLY-WRITTEN MEMORY DEVICES
Organization Name
Inventor(s)
EFFECTIVE STORAGE ALLOCATION FOR SEQUENTIALLY-WRITTEN MEMORY DEVICES - A simplified explanation of the abstract
This abstract first appeared for US patent application 18502764 titled 'EFFECTIVE STORAGE ALLOCATION FOR SEQUENTIALLY-WRITTEN MEMORY DEVICES
Simplified Explanation
The abstract describes a method for writing data to memory devices, where the data object is appended to a compound data object associated with a memory device. The memory devices consist of groups of memory cells corresponding to sequential logical addresses. The data object is written to the memory cells in a specific order, resulting in the full state of some memory cells and the not-full state of others.
- Memory devices receive write requests with data objects
- Data objects are appended to compound data objects associated with memory devices
- Memory devices have groups of memory cells corresponding to sequential logical addresses
- Data objects are written to memory cells in a specific order
- Some memory cells become full, while others remain not-full
Potential Applications
- Data storage systems
- Embedded systems
- Memory management systems
Problems Solved
- Efficient data writing to memory devices
- Optimal use of memory cells
- Sequential data organization
Benefits
- Improved data storage efficiency
- Enhanced memory management
- Streamlined data writing process
Original Abstract Submitted
An input/output (I/O) write request directed at memory devices is received by a processing device. The write request includes a data object. The memory devices include groups of memory cells corresponding to sequential logical addresses. The data object is appended to a compound data object associated with one of the memory devices. The compound data object is associated with the groups of memory cells. A first group of memory cells is in the not-full state, and one or more subsequent, in an order corresponding to the sequential logical addresses, groups of memory cells is identified as a free group of memory cells. The compound data object is caused to be written to the groups of memory cells, resulting in the full state of the first group of memory cells and resulting in the not-full state of at least one of the one or more subsequent groups of memory.
