18502545. SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
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SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18502545 titled 'SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SEMICONDUCTOR DEVICE
Simplified Explanation
- Semiconductor device with substrate, channel layer, insulation layer, ferroelectric layer, fixed charge region, and gate.
- Fixed charge region contains charges of predetermined polarity.
- Absolute value of charge density in fixed charge region is between 0 and 5 μC/cm².
Potential Applications
- Non-volatile memory devices
- High-performance transistors
- Energy-efficient electronics
Problems Solved
- Reduced power consumption
- Improved data retention in memory devices
- Enhanced performance of electronic devices
Benefits
- Lower power consumption
- Increased data retention
- Improved overall performance of electronic devices
Original Abstract Submitted
Provided is a semiconductor device including a substrate on which a channel layer is provided, an insulation layer provided on the substrate, a ferroelectric layer provided on the insulation layer, a fixed charge region provided in the ferroelectric layer and containing charges of a predetermined polarity, and a gate provided on the ferroelectric layer. An absolute value of a charge density in the fixed charge region is greater than 0 and less than 5 μC/cm.
