18502352. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Woo Kyung You of Suwon-si (KR)
Sang Koo Kang of Suwon-si (KR)
Koung Min Ryu of Suwon-si (KR)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18502352 titled 'SEMICONDUCTOR DEVICE
The semiconductor device described in the patent application consists of various components such as a substrate, an active pattern, gate electrodes, gate spacers, source/drain pattern, etch stop film, interlayer insulating film, contact trench, liner film, and source/drain contact.
- The active pattern is positioned on the substrate and extends in one direction.
- Gate electrodes cover the active pattern and extend in another direction.
- Gate spacers are located on the sidewalls of the gate electrodes.
- The source/drain pattern is placed between adjacent gate electrodes.
- An etch stop film is present along the sidewall of the gate spacer and the profile of the source/drain pattern.
- An interlayer insulating film separates the gate electrodes with a contact trench exposing the source/drain pattern.
- A liner film is on the outer sidewall of the contact trench.
- The source/drain contact fills the contact trench and connects to the source/drain pattern.
Potential Applications: - This technology can be utilized in the manufacturing of advanced semiconductor devices for various electronic applications. - It can enhance the performance and efficiency of integrated circuits in electronic devices.
Problems Solved: - Provides a more efficient and reliable connection between the source/drain pattern and the source/drain contact. - Improves the overall functionality and performance of semiconductor devices.
Benefits: - Enhanced connectivity and reliability in semiconductor devices. - Improved performance and efficiency of integrated circuits. - Potential for increased functionality in electronic devices.
Commercial Applications: Title: Advanced Semiconductor Device Technology for Enhanced Connectivity This technology can be applied in the production of high-performance electronic devices such as smartphones, computers, and other consumer electronics. It can also benefit industries involved in semiconductor manufacturing and research.
Prior Art: Readers can explore prior patents related to semiconductor device manufacturing processes, gate electrode structures, and source/drain contact technologies to gain a deeper understanding of the advancements in this field.
Frequently Updated Research: Researchers are continuously exploring new materials and techniques to further improve the connectivity and performance of semiconductor devices. Stay updated on the latest developments in semiconductor technology to leverage the most recent advancements in the field.
Questions about Semiconductor Device Technology: 1. How does the gate spacer contribute to the overall functionality of the semiconductor device? The gate spacer helps to control the spacing and alignment of the gate electrodes, ensuring proper functioning of the device.
2. What role does the etch stop film play in the manufacturing process of semiconductor devices? The etch stop film acts as a barrier to prevent over-etching during the fabrication process, ensuring precise patterning of the source/drain regions.
Original Abstract Submitted
A semiconductor device includes a substrate, an active pattern disposed on the substrate and extending in a first direction, gate electrodes covering the active pattern and extending in a second direction, a gate spacer disposed on a sidewall of each of the gate electrodes, a source/drain pattern disposed between adjacent ones of the gate electrodes, an etch stop film disposed along a sidewall of the gate spacer and a profile of the source/drain pattern, an interlayer insulating film disposed between the adjacent ones of the gate electrodes with a contact trench exposing the source/drain pattern defined therein, a liner film disposed on an outer sidewall of the contact trench, and a source/drain contact disposed on the liner film and filling the contact trench, in which the source/drain contact is connected to the source/drain pattern. At least a portion of the liner film may be disposed in the source/drain pattern.
