18502324. SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)

SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

Organization Name

Samsung Electronics Co., Ltd.

Inventor(s)

Won Hyuk Lee of Incheon (KR)

Jong Chul Park of Seoul (KR)

Sang Duk Park of Hwaseong-si (KR)

Hong Sik Shin of Seoul (KR)

Do Haing Lee of Hwaseong-si, Gyeonggi-do (KR)

SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 18502324 titled 'SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

Simplified Explanation

The semiconductor device described in the abstract includes first and second source/drain patterns on an active pattern, a first source/drain contact on the first source/drain pattern, a second source/drain contact on the second source/drain pattern, and a gate structure on the active pattern between the first and second source/drain contacts.

• The first source/drain contact includes a barrier film and a filling film.
• The top surface of the first source/drain contact is lower than the top surface of the gate structure.
• The height from the top surface of the active pattern to the top surface of the first source/drain barrier film is less than the height to the top surface of the first source/drain filling film.

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1. 1. 1. Potential Applications

• Semiconductor manufacturing
• Integrated circuits
• Electronic devices

1. 1. 1. Problems Solved

• Improved performance of semiconductor devices
• Enhanced efficiency of source/drain contacts
• Reduction of parasitic resistance

1. 1. 1. Benefits

• Higher device performance
• Better reliability
• Increased efficiency in electronic devices

Original Abstract Submitted

A semiconductor device includes, first and second source/drain patterns on an active pattern and spaced apart from each other, a first source/drain contact on the first source/drain pattern and including a first source/drain barrier film and a first source/drain filling film on the first source/drain barrier film, a second source/drain contact on the second source/drain pattern, and a gate structure on the active pattern between the first and second source/drain contacts and including a gate electrode, wherein a top surface of the first source/drain contact is lower than a top surface of the gate structure, and a height from a top surface of the active pattern to a top surface of the first source/drain barrier film is less than a height from the top surface of the active pattern to a top surface of the first source/drain filling film.