18502225. SEMICONDUCTOR STRUCTURE OF SCHOTTKY DEVICES simplified abstract (MEDIATEK Inc.)
Contents
- 1 SEMICONDUCTOR STRUCTURE OF SCHOTTKY DEVICES
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR STRUCTURE OF SCHOTTKY DEVICES - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
SEMICONDUCTOR STRUCTURE OF SCHOTTKY DEVICES
Organization Name
Inventor(s)
Shih-Chuan Chiu of Hsinchu City (TW)
Chia-Hsin Hu of Hsinchu City (TW)
Zheng Zeng of Hsinchu City (TW)
SEMICONDUCTOR STRUCTURE OF SCHOTTKY DEVICES - A simplified explanation of the abstract
This abstract first appeared for US patent application 18502225 titled 'SEMICONDUCTOR STRUCTURE OF SCHOTTKY DEVICES
Simplified Explanation
The patent application describes semiconductor structures of Schottky devices, including the formation of N-type and P-type well regions over a P-type semiconductor substrate. The structure also includes multiple active regions with fins, electrodes, and source/drain features in the same level, forming an emitter region, base region, and collector region of a Schottky BJT.
- N-type and P-type well regions are formed over a P-type semiconductor substrate.
- First active region with first fins is formed over the P-type well region.
- Second active region with second fins is formed over the N-type well region.
- Third active region with third fins is formed over the N-type well region.
- Electrodes, source/drain features, and active regions are formed in the same level.
- Emitter region, base region, and collector region of a Schottky BJT are formed accordingly.
Potential Applications
The technology described in the patent application could be applied in:
- Power electronics
- Semiconductor devices
- Integrated circuits
Problems Solved
This technology helps in:
- Improving the performance of Schottky devices
- Enhancing the efficiency of semiconductor structures
- Increasing the reliability of integrated circuits
Benefits
The benefits of this technology include:
- Higher efficiency in power electronics
- Improved performance of semiconductor devices
- Enhanced reliability of integrated circuits
Potential Commercial Applications
The technology has potential commercial applications in:
- Electronics manufacturing industry
- Semiconductor companies
- Research and development organizations
Possible Prior Art
One possible prior art for this technology could be the traditional Schottky diode structures with separate active regions for the emitter, base, and collector regions.
Unanswered Questions
How does this technology compare to existing Schottky device structures?
The article does not provide a direct comparison with existing Schottky device structures in terms of performance, efficiency, or reliability.
What are the specific manufacturing processes involved in creating these semiconductor structures?
The article does not detail the specific manufacturing processes involved in creating the semiconductor structures described in the patent application.
Original Abstract Submitted
Semiconductor structures of Schottky devices are provided. An N-type well region and a P-type well region are formed over a P-type semiconductor substrate. A first active region is formed over the P-type well region, and includes a plurality of first fins. A second active region is formed over the N-type well region, and includes a plurality of second fins. A third active region is formed over the N-type well region, and includes a plurality of third fins. A plurality of electrodes are formed over the third active region. The electrodes, the first source/drain features and the second source/drain features are formed in the same level. An emitter region of a Schottky BJT is formed by the electrodes, a base region of the Schottky BJT is formed by the N-type well region, and a collector region of the Schottky BJT is formed by the P-type semiconductor substrate.
