18500841. APPARATUS AND METHOD OF MEASURING RELIABILITY FOR FLASH MEMORY MATERIAL THROUGH A CURRENT MEASUREMENT simplified abstract (SK hynix Inc.)

From WikiPatents
Jump to navigation Jump to search

APPARATUS AND METHOD OF MEASURING RELIABILITY FOR FLASH MEMORY MATERIAL THROUGH A CURRENT MEASUREMENT

Organization Name

SK hynix Inc.

Inventor(s)

Nam Cheol Jeon of Icheon-si Gyeonggi-do (KR)

Hea Jong Yang of Icheon-si Gyeonggi-do (KR)

Tae Un Youn of Icheon-si Gyeonggi-do (KR)

APPARATUS AND METHOD OF MEASURING RELIABILITY FOR FLASH MEMORY MATERIAL THROUGH A CURRENT MEASUREMENT - A simplified explanation of the abstract

This abstract first appeared for US patent application 18500841 titled 'APPARATUS AND METHOD OF MEASURING RELIABILITY FOR FLASH MEMORY MATERIAL THROUGH A CURRENT MEASUREMENT

Simplified Explanation

The patent application describes a reliability measuring apparatus for flash memory using an ONOA current measuring circuit and a reliability indicator generator.

  • The apparatus measures an ONOA current by applying a specific voltage to a word line connected to a memory cell.
  • The reliability indicator is generated based on the ONOA current measured by the circuit.

Potential Applications

This technology can be applied in:

  • Flash memory testing and quality control.
  • Memory cell reliability assessment in electronic devices.

Problems Solved

This technology addresses:

  • Ensuring the reliability and performance of flash memory.
  • Providing a method for accurately measuring ONOA current in memory cells.

Benefits

The benefits of this technology include:

  • Improved reliability and longevity of flash memory.
  • Enhanced quality control in memory manufacturing processes.

Potential Commercial Applications

A potential commercial application for this technology could be:

  • Memory chip manufacturers integrating this apparatus into their production line for quality assurance.

Possible Prior Art

One possible prior art for this technology could be:

  • Existing methods for measuring current in memory cells, which may not be as accurate or reliable as the ONOA current measuring circuit.

Unanswered Questions

How does this technology compare to other methods of measuring current in memory cells?

This article does not provide a direct comparison with other current measuring techniques.

What impact could this technology have on the overall reliability of flash memory devices?

The article does not delve into the potential impact of this technology on the reliability of flash memory devices.


Original Abstract Submitted

A reliability measuring apparatus includes an oxide-nitride-oxide-alumina (ONOA) current measuring circuit configured to measure an ONOA current by applying an ONOA current measuring voltage to a selected word line coupled to a selected memory cell in a flash memory and a reliability indicator generator configured to a reliability indicator using the ONOA current measured through the measuring circuit.

Retrieved from "http://wikipatents.org/index.php?title=18500841._APPARATUS_AND_METHOD_OF_MEASURING_RELIABILITY_FOR_FLASH_MEMORY_MATERIAL_THROUGH_A_CURRENT_MEASUREMENT_simplified_abstract_(SK_hynix_Inc.)&oldid=61710"