18500275. SEMICONDUCTOR STRUCTURE WITH NITRIDE CAPS simplified abstract (Micron Technology, Inc.)
Contents
- 1 SEMICONDUCTOR STRUCTURE WITH NITRIDE CAPS
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR STRUCTURE WITH NITRIDE CAPS - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
SEMICONDUCTOR STRUCTURE WITH NITRIDE CAPS
Organization Name
Inventor(s)
SEMICONDUCTOR STRUCTURE WITH NITRIDE CAPS - A simplified explanation of the abstract
This abstract first appeared for US patent application 18500275 titled 'SEMICONDUCTOR STRUCTURE WITH NITRIDE CAPS
Simplified Explanation
The patent application describes methods, apparatuses, and systems related to semiconductor structures with nitride caps.
- The semiconductor structure includes a patterned material with active areas, a metal material on the surface of each active area, a second conductive material, a third conductive material, and a first dielectric material.
- A nitride material is adjacent to each vertical side of the second conductive material, the third conductive material, and the first dielectric material.
- A second nitride material is on the first horizontal surface of each nitride material and each first dielectric material, along with a second metal material.
Potential Applications
The technology described in the patent application could be applied in the semiconductor industry for the development of advanced semiconductor structures with improved performance and reliability.
Problems Solved
This technology addresses the need for enhanced semiconductor structures that can withstand high temperatures and harsh environments while maintaining optimal functionality.
Benefits
The benefits of this technology include increased durability, improved thermal stability, and enhanced electrical performance of semiconductor structures.
Potential Commercial Applications
The technology could find commercial applications in the manufacturing of electronic devices, integrated circuits, and other semiconductor products.
Possible Prior Art
One possible prior art could be the use of nitride caps in semiconductor structures to improve their performance and reliability.
Unanswered Questions
How does the presence of nitride caps affect the overall cost of manufacturing semiconductor structures?
The patent application does not provide information on the cost implications of incorporating nitride caps in semiconductor structures.
What specific performance improvements can be expected from the use of nitride caps in semiconductor structures?
The patent application does not detail the exact performance enhancements that can be achieved by implementing nitride caps in semiconductor structures.
Original Abstract Submitted
Methods, apparatuses, and systems related to semiconductor structure with nitride caps are described. An example apparatus includes a semiconductor structure comprising a patterned material comprising active areas, a metal material on a surface of each active area. The patterned material further includes a second conductive material, a third conductive material, and a first dielectric material, and a nitride material adjacent each vertical side of the second conductive material, the third conductive material, and the first dielectric material. The apparatus includes a second nitride material on a first horizontal surface of each nitride material and each first dielectric material, and a second metal material.
