18500254. SEMICONDUCTOR STRUCTURE WITH CURVED SURFACES simplified abstract (Micron Technology, Inc.)

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SEMICONDUCTOR STRUCTURE WITH CURVED SURFACES

Organization Name

Micron Technology, Inc.

Inventor(s)

Yenting Lin of Boise ID (US)

SEMICONDUCTOR STRUCTURE WITH CURVED SURFACES - A simplified explanation of the abstract

This abstract first appeared for US patent application 18500254 titled 'SEMICONDUCTOR STRUCTURE WITH CURVED SURFACES

Simplified Explanation

The patent application describes methods, apparatuses, and systems related to a semiconductor structure with curved surfaces. Here is a simplified explanation of the patent application:

  • The apparatus includes a semiconductor structure with patterned material containing active areas, conductive materials, and metal materials.
  • The patterned material also includes nitride materials separating different components.
  • A curved surface is formed on a portion of the metal material and nitride material.
  • A layer comprising an oxide material and a metal material is present on the patterned material, with the oxide material in contact with the curved surface.

Potential Applications

This technology could be applied in the manufacturing of advanced semiconductor devices, such as curved displays, sensors, or integrated circuits.

Problems Solved

This technology solves the problem of integrating curved surfaces into semiconductor structures, allowing for more versatile and efficient device designs.

Benefits

The benefits of this technology include improved performance, increased design flexibility, and potentially reduced manufacturing costs for curved semiconductor devices.

Potential Commercial Applications

Potential commercial applications of this technology could include curved OLED displays for smartphones, curved sensors for automotive applications, and curved integrated circuits for wearable devices.

Possible Prior Art

One possible prior art could be the use of curved surfaces in semiconductor devices for specific applications, but the specific combination of materials and structures described in this patent application may be novel.

Unanswered Questions

How does this technology compare to existing methods for creating curved semiconductor structures?

This article does not provide a direct comparison to existing methods or technologies for creating curved semiconductor structures. Further research or a comparative analysis would be needed to address this question.

What are the potential challenges in scaling up the production of semiconductor structures with curved surfaces using this technology?

The article does not discuss potential challenges in scaling up production using this technology. Factors such as cost, yield rates, and manufacturing complexity could be important considerations in addressing this question.


Original Abstract Submitted

Methods, apparatuses, and systems related to semiconductor structure with curved surfaces are described. An example apparatus includes a semiconductor structure comprising a patterned material comprising active areas, a first conductive material on a surface of each active area, and a first metal material on a surface of each first conductive material. The patterned material further includes a second and third conductive material, a first nitride material, and a second nitride material separating each active area, first conductive material, and first metal material from each second and third conductive material, and first nitride material. The apparatus includes a curved surface formed on a portion of the first metal material and second nitride material. The apparatus further includes a first layer comprising an oxide material and a second metal material on the patterned material, where the oxide material contacts the curved surface.