18499117. INTEGRATED CIRCUIT DEVICE simplified abstract (Samsung Electronics Co., Ltd.)

INTEGRATED CIRCUIT DEVICE

Organization Name

Samsung Electronics Co., Ltd.

Inventor(s)

Jeonghyeon Lee of Suwon-si (KR)

Hakjong Lee of Suwon-si (KR)

Yeonghan Gwon of Suwon-si (KR)

Hanyoung Song of Suwon-si (KR)

Subin Lee of Suwon-si (KR)

Junyoup Lee of Suwon-si (KR)

Hyunjun Lim of Suwon-si (KR)

Taeho Cha of Suwon-si (KR)

Seunghyeon Hong of Suwon-si (KR)

INTEGRATED CIRCUIT DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18499117 titled 'INTEGRATED CIRCUIT DEVICE

The abstract describes an integrated circuit device with fin-type active regions, a gate line, a capping insulating layer, and a fin isolation insulating portion.

• The device includes a pair of collinear fin-type active regions on a substrate.
• A gate line is placed on one of the fin-type active regions.
• A capping insulating layer covers the gate line.
• A fin isolation insulating portion passes through the capping insulating layer vertically between the pair of fin-type active regions.
• The fin isolation insulating portion consists of an isolation insulating plug with a first portion between the active regions and a second portion connected to the first portion.
• An isolation insulating liner surrounds the bottom surface and sidewall of the isolation insulating plug.
• The uppermost portion of the isolation insulating liner is closer to the substrate than the top surface of the isolation insulating plug.

Potential Applications: - Semiconductor manufacturing - Integrated circuit design - Electronics industry

Problems Solved: - Improved isolation between active regions - Enhanced performance of integrated circuits - Better control over electrical properties

Benefits: - Higher efficiency in circuit operation - Increased reliability of electronic devices - Enhanced overall performance

Commercial Applications: Title: Advanced Semiconductor Devices for Enhanced Circuit Performance This technology can be used in the production of high-performance electronic devices, such as smartphones, computers, and other consumer electronics. It can also benefit industries like telecommunications, automotive, and aerospace.

Questions about the technology: 1. How does the fin isolation insulating portion improve the performance of the integrated circuit device? 2. What are the potential challenges in implementing this technology in large-scale semiconductor manufacturing processes?

Frequently Updated Research: Researchers are continually exploring ways to optimize the design and materials used in integrated circuit devices to further enhance their performance and efficiency. Stay updated on the latest advancements in semiconductor technology to leverage the full potential of this innovation.

Original Abstract Submitted

An integrated circuit device includes a pair of fin-type active regions collinear with each other on a substrate, a gate line disposed on one of the fin-type active regions, a capping insulating layer that covers the gate line, and a fin isolation insulating portion that passes through the capping insulating layer in a vertical direction between the pair of fin-type active regions. The fin isolation insulating portion includes an isolation insulating plug that includes a first portion disposed between the pair of fin-type active regions and a second portion integrally connected to the first portion and that passes through the capping insulating layer in the vertical direction, and an isolation insulating liner that surrounds a bottom surface and a sidewall of the isolation insulating plug. The isolation insulating liner includes an uppermost portion that is closer to the substrate than a top surface of the isolation insulating plug.