18498673. INTEGRATED CIRCUIT DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
INTEGRATED CIRCUIT DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME
Organization Name
Inventor(s)
Junhyoung Kim of Suwon-si (KR)
INTEGRATED CIRCUIT DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18498673 titled 'INTEGRATED CIRCUIT DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME
The abstract describes an integrated circuit device with a memory cell area and a connection area on the substrate. The gate stack consists of multiple gate electrodes arranged vertically, with gate connection openings in the connection area exposing one gate electrode at the bottom. Gate connection structures cover the inner sides of the openings and are connected to the gate electrodes, with gate contacts at the upper ends of the structures.
- Gate stack with multiple gate electrodes arranged vertically
- Gate connection openings in the connection area
- Gate connection structures covering inner sides of the openings
- Gate contacts connected to the upper ends of the structures
- Memory cell area and connection area on the substrate
Potential Applications: - Memory devices - Integrated circuits - Semiconductor technology
Problems Solved: - Efficient connection between gate electrodes and contacts - Improved performance of memory cells - Enhanced reliability of integrated circuits
Benefits: - Higher efficiency in data storage - Increased performance of electronic devices - Enhanced reliability and durability of circuits
Commercial Applications: Title: "Advanced Memory Cell Integrated Circuits for Enhanced Performance" This technology can be used in various electronic devices such as smartphones, computers, and servers to improve memory storage and overall performance. It can also benefit the semiconductor industry by enhancing the reliability and efficiency of integrated circuits.
Prior Art: Researchers can explore prior patents related to memory cell integration, gate stack structures, and semiconductor device connections to understand the evolution of this technology.
Frequently Updated Research: Researchers are constantly developing new methods to optimize gate stack structures and improve the performance of memory cells in integrated circuits.
Questions about Integrated Circuit Device: 1. How does the gate stack structure impact the performance of memory cells in integrated circuits? 2. What are the potential challenges in implementing this technology in commercial electronic devices?
Original Abstract Submitted
An integrated circuit device includes a substrate including a memory cell area and a connection area, a gate stack including a plurality of gate electrodes apart from each other in a vertical direction on the substrate, a plurality of gate connection openings arranged in the connection area to extend inward from an upper surface of the gate stack, one of the plurality of gate electrodes being exposed at a bottom surface of each of the plurality of gate connection openings, a plurality of gate connection structures respectively covering at least inner side surfaces of the plurality of gate connection openings, each of the plurality of gate connection structures being connected with the one gate electrode, and a plurality of gate contacts respectively connected to upper ends of the plurality of gate connection structures.
