18495519. SEMICONDUCTOR MEMORY DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
Contents
SEMICONDUCTOR MEMORY DEVICE
Organization Name
Inventor(s)
Hyun Geun Choi of Suwon-si (KR)
Seok Han Park of Suwon-si (KR)
SEMICONDUCTOR MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18495519 titled 'SEMICONDUCTOR MEMORY DEVICE
The semiconductor memory device described in the abstract consists of an active pattern on a first substrate with data storage patterns and connections to bit lines and word lines.
- The device has a first and second surface on the first substrate, with the data storage pattern between the active pattern and the substrate.
- A bit line is connected to the active pattern on one surface and extends in a second direction.
- A word line is located on the sidewall of the active pattern.
- The device also includes a second substrate with a peripheral gate structure and connection wiring structures.
- A through via penetrates the second substrate to connect the wiring structures.
- Potential Applications:**
- This semiconductor memory device can be used in various electronic devices such as smartphones, tablets, and computers. - It can also be utilized in data storage systems, servers, and other memory-intensive applications.
- Problems Solved:**
- The device provides efficient data storage and retrieval capabilities. - It offers a compact and reliable solution for memory storage needs in electronic devices.
- Benefits:**
- Improved data storage capacity and speed. - Enhanced reliability and durability of memory storage. - Compact design for space-saving in electronic devices.
- Commercial Applications:**
- The technology can be applied in the production of consumer electronics, data centers, and other memory-dependent industries. - It has the potential to enhance the performance and efficiency of various electronic devices, leading to a competitive edge in the market.
- Questions about Semiconductor Memory Device:**
1. How does the active pattern on the first substrate contribute to the functionality of the semiconductor memory device? 2. What are the advantages of having a word line on the sidewall of the active pattern in this memory device?
- Frequently Updated Research:**
- Stay updated on advancements in semiconductor memory technology to ensure the device remains competitive in the market.
Original Abstract Submitted
A semiconductor memory device including an active pattern on a first substrate and comprising a first and second surfaces opposite to each other in a first direction, a data storage pattern between the active pattern and the first substrate and connected to a first surface of the active pattern, a bit line on the active pattern, connected to a second surface of the active pattern, and extending in a second direction, a word line on a sidewall of the active pattern, a second substrate, a peripheral gate structure on a first surface of the second substrate, a first connection wiring structure on the first surface of the second substrate and connected to the peripheral gate structure and bit line, a second connection wiring structure on a second surface of the second substrate and a through via penetrating the second substrate and connecting the first and second connection wiring structures.
