18495266. METHOD OF FABRICATING SEMICONDUCTOR DEVICE simplified abstract (SEMES CO., LTD.)
Contents
- 1 METHOD OF FABRICATING SEMICONDUCTOR DEVICE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 METHOD OF FABRICATING SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
METHOD OF FABRICATING SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Thomas Jongwan Kwon of Gyeonggi-do (KR)
Yun Sang Kim of Gyeonggi-do (KR)
METHOD OF FABRICATING SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18495266 titled 'METHOD OF FABRICATING SEMICONDUCTOR DEVICE
Simplified Explanation
The method described in the abstract involves fabricating a semiconductor device by filling trenches with metal layers using a supercritical fluid deposition (SFD) method. Here are some key points to note:
- Providing a substrate with active regions and device isolation film
- Forming wordline trenches by removing portions of active regions and device isolation film
- Forming gate insulating films along inner sidewalls of the wordline trenches
- Filling the wordline trenches with metal layers using SFD method
Potential Applications
This technology could be applied in the manufacturing of advanced semiconductor devices, such as memory chips and processors.
Problems Solved
This method solves the problem of adequately filling trenches in semiconductor devices, which is crucial for their proper functioning and performance.
Benefits
The use of supercritical fluid deposition method ensures precise and uniform filling of trenches, leading to improved device reliability and performance.
Potential Commercial Applications
This technology could be valuable for semiconductor manufacturers looking to enhance the efficiency and reliability of their products.
Possible Prior Art
One possible prior art could be the use of conventional deposition methods for filling trenches in semiconductor devices.
Unanswered Questions
1. What specific types of semiconductor devices can benefit the most from this fabrication method? 2. Are there any limitations or challenges associated with using the supercritical fluid deposition method for filling trenches in semiconductor devices?
Original Abstract Submitted
A method of fabricating a semiconductor device, which is capable of sufficiently filling trenches, is provided. The method includes: providing a substrate having defined thereon a plurality of active regions, which are spaced apart from one another by a device isolation film; forming a plurality of wordline trenches, which extend longitudinally in one direction, by removing portions of the active regions and portions of the device isolation film; forming gate insulating films along inner sidewalls of the wordline trenches; and forming wordlines, which fill portions of the wordline trenches, on the gate insulating films, wherein the forming the wordlines, comprises filling the portions of the wordline trenches with metal layers using a supercritical fluid deposition (SFD) method.
