18495220. FIELD EFFECT TRANSISTOR, CAPACITOR, AND ELECTRONIC APPARATUS INCLUDING DOMAIN-CONTROLLED FERROELECTRIC MATERIAL simplified abstract (Samsung Electronics Co., Ltd.)
Contents
- 1 FIELD EFFECT TRANSISTOR, CAPACITOR, AND ELECTRONIC APPARATUS INCLUDING DOMAIN-CONTROLLED FERROELECTRIC MATERIAL
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 FIELD EFFECT TRANSISTOR, CAPACITOR, AND ELECTRONIC APPARATUS INCLUDING DOMAIN-CONTROLLED FERROELECTRIC MATERIAL - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
FIELD EFFECT TRANSISTOR, CAPACITOR, AND ELECTRONIC APPARATUS INCLUDING DOMAIN-CONTROLLED FERROELECTRIC MATERIAL
Organization Name
Inventor(s)
FIELD EFFECT TRANSISTOR, CAPACITOR, AND ELECTRONIC APPARATUS INCLUDING DOMAIN-CONTROLLED FERROELECTRIC MATERIAL - A simplified explanation of the abstract
This abstract first appeared for US patent application 18495220 titled 'FIELD EFFECT TRANSISTOR, CAPACITOR, AND ELECTRONIC APPARATUS INCLUDING DOMAIN-CONTROLLED FERROELECTRIC MATERIAL
Simplified Explanation
The abstract describes a field effect transistor with a unique gate insulating layer that includes both ferroelectric and non-ferroelectric regions, as well as a gate electrode with corresponding pattern regions.
- The field effect transistor includes a source region, a drain region, and a channel between them.
- The gate insulating layer covers the channel and has a first region dominated by a ferroelectric crystal structure and a second region dominated by a non-ferroelectric structure.
- The gate electrode covers the gate insulating layer and has a first pattern region facing the first region of the gate insulating layer and a second pattern region facing the second region.
Potential Applications
This technology could be applied in:
- High-speed electronic devices
- Low-power consumption devices
- Memory storage devices
Problems Solved
This technology helps in:
- Improving transistor performance
- Reducing power consumption
- Enhancing memory storage capabilities
Benefits
The benefits of this technology include:
- Increased efficiency in electronic devices
- Enhanced data storage capabilities
- Improved overall performance of transistors
Potential Commercial Applications
Potential commercial applications of this technology could include:
- Semiconductor industry
- Electronics manufacturing companies
- Memory storage device manufacturers
Possible Prior Art
One possible prior art could be the use of ferroelectric materials in transistors for memory storage applications.
Unanswered Questions
How does this technology compare to traditional field effect transistors in terms of performance and efficiency?
This article does not provide a direct comparison between this technology and traditional field effect transistors. Further research or testing would be needed to determine the specific performance and efficiency differences.
What are the potential challenges or limitations of implementing this technology on a larger scale in commercial electronic devices?
The article does not address any challenges or limitations that may arise when scaling up this technology for commercial applications. Additional studies or experiments would be necessary to identify and address any potential obstacles.
Original Abstract Submitted
A field effect transistor includes a source region, a drain region, a channel between the source region and the drain region, a gate insulating layer configured to cover an upper surface of the channel, and a gate electrode configured to cover an upper surface of the gate insulating layer. The gate insulating layer includes a first region where a ferroelectric crystal structure is dominant and a second region where a non-ferroelectric structure is dominant. The gate electrode includes a first pattern region facing the first region of the gate insulating layer and a second pattern region facing the second region of the gate insulating layer.
