18495038. SEMICONDUCTOR MEMORY DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
SEMICONDUCTOR MEMORY DEVICE
Organization Name
Inventor(s)
Hyungsuk Jung of Suwon-si (KR)
SEMICONDUCTOR MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18495038 titled 'SEMICONDUCTOR MEMORY DEVICE
The semiconductor device described in the patent application includes a substrate with first and second impurity regions, a first word line, a bit line, a first conductive pattern, first and second partial electrodes, a first dielectric layer, and a common electrode.
- The substrate contains first and second impurity regions.
- A first word line is positioned in the substrate with the first impurity region on one side and the second impurity region on the other side.
- A bit line is connected to the first impurity region.
- A first conductive pattern is connected to the second impurity region.
- First and second partial electrodes are placed on the first conductive pattern.
- A first dielectric layer is in contact with the upper surfaces of the first and second partial electrodes.
- A common electrode is located on the first dielectric layer.
Potential Applications: - Memory devices - Integrated circuits - Semiconductor technology
Problems Solved: - Efficient data storage and retrieval - Improved semiconductor device performance
Benefits: - Enhanced memory capacity - Faster data processing - Increased reliability
Commercial Applications: Title: Advanced Semiconductor Memory Devices This technology can be utilized in the production of high-performance memory devices for various electronic applications, leading to improved efficiency and functionality in consumer electronics, telecommunications, and computing industries.
Questions about the technology: 1. How does this semiconductor device improve data storage capabilities? 2. What are the potential market implications of implementing this technology in memory devices?
Original Abstract Submitted
A semiconductor device may include a substrate including a first impurity region and a second impurity region; a first word line in a region of the substrate with the first impurity region on one side of the first word line and the second impurity region on an other side of the first word line; a bit line connected to the first impurity region; a first conductive pattern connected to the second impurity region; a first partial electrode and a second partial electrode on the first conductive pattern; a first dielectric layer in contact with an upper surface of the first partial electrode and an upper surface of the second partial electrode; and a common electrode on the first dielectric layer. An area of the upper surface of the first partial electrode may be different from an area of the upper surface of the second partial electrode.
