18494183. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Byungchul Kang of Suwon-si (KR)
Chunghwan Shin of Suwon-si (KR)
Seongdong Lim of Suwon-si (KR)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18494183 titled 'SEMICONDUCTOR DEVICE
The semiconductor device described in the abstract includes a substrate with various patterns such as active, channel, source/drain, and gate electrode patterns.
- The semiconductor patterns are vertically stacked and spaced apart from each other, enhancing the device's performance.
- Inner electrodes are present between neighboring semiconductor patterns, improving the overall functionality.
- The gate contact structure includes a lower gate contact on the outer electrode and an upper gate contact on top of it.
- The lower gate contact consists of a first liner pattern, a first filling pattern, and a nucleation pattern for optimal electrical connection.
- The upper gate contact does not include the nucleation pattern, simplifying the structure.
Potential Applications: - This semiconductor device can be used in various electronic applications requiring high performance and reliability. - It can be utilized in the manufacturing of advanced integrated circuits and microprocessors.
Problems Solved: - The device addresses the need for improved vertical stacking of semiconductor patterns for enhanced functionality. - It solves the challenge of optimizing gate contact structures for efficient electrical connections.
Benefits: - Enhanced performance and reliability in electronic devices. - Simplified gate contact structure for easier manufacturing processes.
Commercial Applications: Title: Advanced Semiconductor Device for High-Performance Electronics This technology can be applied in the production of cutting-edge electronic devices such as smartphones, computers, and IoT devices, catering to the demand for faster and more efficient technology in the market.
Questions about the technology: 1. How does the vertical stacking of semiconductor patterns improve the device's performance? 2. What are the advantages of having inner electrodes between neighboring semiconductor patterns?
Frequently Updated Research: Stay updated on the latest advancements in semiconductor technology to ensure the continued improvement and innovation in electronic devices.
Original Abstract Submitted
A semiconductor device may include a substrate including an active pattern, a channel pattern on the active pattern and including semiconductor patterns that are vertically stacked and spaced apart from each other, a source/drain pattern connected to the semiconductor patterns, a gate electrode on the semiconductor patterns and including inner electrodes between neighboring semiconductor patterns and an outer electrode on an uppermost semiconductor pattern, and a gate contact structure electrically connected to the outer electrode. The gate contact structure may include a lower gate contact on a top surface of the outer electrode and an upper gate contact on the lower gate contact. The lower gate contact may include a first liner pattern, a first filling pattern on the first liner pattern, and a nucleation pattern between the first liner pattern and the first filling pattern. The upper gate contact may not include the nucleation pattern.
