18493924. SEMICONDUCTOR MEMORY DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
SEMICONDUCTOR MEMORY DEVICE
Organization Name
Inventor(s)
Seung Hee Lee of Suwon-si (KR)
SEMICONDUCTOR MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18493924 titled 'SEMICONDUCTOR MEMORY DEVICE
The semiconductor memory device described in the abstract features a unique structure that enhances integration and electrical characteristics.
- The device includes a bit line, first and second channel patterns, first and second word lines, and first and second capacitors.
- The first and second channel patterns contain a metal oxide pattern with indium (In), gallium (Ga), and tin (Sn), with the peak position of tin differing from that of gallium in the spatial composition distribution.
- The first word line is positioned between the first and second channel patterns, while the second word line is spaced apart from the first word line in the first direction.
- The first and second capacitors are connected to the first and second channel patterns, respectively.
Potential Applications: - This technology can be used in various semiconductor memory devices to improve integration and electrical characteristics.
Problems Solved: - Enhances integration and electrical characteristics of semiconductor memory devices. - Provides a unique structure for improved performance.
Benefits: - Increased efficiency and performance in semiconductor memory devices. - Enhanced integration capabilities for compact designs.
Commercial Applications: Title: Enhanced Semiconductor Memory Devices for Improved Integration This technology can be applied in the manufacturing of various semiconductor memory devices, leading to more efficient and compact designs. It can have significant implications in the electronics industry, particularly in the development of advanced memory solutions.
Questions about the technology: 1. How does the unique structure of the semiconductor memory device improve integration and electrical characteristics? - The unique structure, including the specific composition of the metal oxide pattern and the positioning of the various components, enhances the overall performance and efficiency of the device.
2. What are the potential implications of this technology in the semiconductor industry? - This technology can lead to the development of more advanced and efficient semiconductor memory devices, impacting various applications in the electronics industry.
Original Abstract Submitted
There is provided a semiconductor memory device having improved integration and electrical characteristics. The semiconductor memory device includes a bit line extending in a first direction on a substrate, a first channel pattern disposed on the bit line, a second channel pattern disposed on the bit line and spaced apart from the first channel pattern in the first direction, a first word line disposed between the first channel pattern and the second channel pattern extends in a second direction, a second word line disposed between the first channel pattern and the second channel pattern, extends in the second direction, and is spaced apart from the first word line in the first direction, and a first capacitor and a second capacitor disposed on and connected to the first channel pattern and the second channel pattern, respectively, wherein each of the first channel pattern and the second channel pattern includes a first metal oxide pattern including indium (In), gallium (Ga) and tin (Sn), and a position of a peak of tin is different from a position of a peak of gallium in a spatial composition distribution of the first metal oxide pattern.
