18493853. NON-VOLATILE MEMORY DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
NON-VOLATILE MEMORY DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME
Organization Name
Inventor(s)
Dongsung Choi of Suwon-si (KR)
Changheon Cheon of Suwon-si (KR)
NON-VOLATILE MEMORY DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18493853 titled 'NON-VOLATILE MEMORY DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME
Simplified Explanation:
The patent application describes a non-volatile memory device with a unique structure that includes gate electrodes, mold insulating layers, a channel structure, and a cell contact. The device features gate electrodes stacked in a step shape and a cell contact connected to a specific gate electrode but not to others.
Key Features and Innovation:
- Non-volatile memory device with gate electrodes stacked in a step shape.
- Cell contact connected to a specific gate electrode, enhancing device performance.
- Unique structure design for improved memory functionality.
Potential Applications: The technology can be applied in various electronic devices requiring non-volatile memory, such as smartphones, tablets, and computers.
Problems Solved: The technology addresses the need for efficient and reliable non-volatile memory devices with improved performance and functionality.
Benefits:
- Enhanced memory performance.
- Improved device reliability.
- Efficient data storage capabilities.
Commercial Applications: The technology can be utilized in the consumer electronics industry for the development of advanced memory devices, potentially leading to improved product performance and reliability.
Questions about the Technology: 1. How does the unique structure of the memory device impact its performance? 2. What specific advantages does the cell contact design offer in terms of memory functionality?
Frequently Updated Research: Stay updated on advancements in non-volatile memory technology and related innovations to understand the latest developments in the field.
By focusing on the unique structure of the non-volatile memory device, this technology aims to enhance memory performance and reliability in various electronic devices.
Original Abstract Submitted
A non-volatile memory device includes a substrate, a mold structure including a plurality of gate electrodes and a plurality of mold insulating layers, wherein the plurality of gate electrodes are stacked in a step shape, a channel structure that extends through the mold structure, and a cell contact that extends through the mold structure, the cell contact is connected to a first gate electrode, and the cell contact is not electrically connected to a second gate electrode among the plurality of gate electrodes, wherein the first gate electrode includes: an extension portion; a pad portion having a vertical thickness greater than a vertical thickness of the extension portion; and a connection portion that electrically connects the pad portion to the cell contact, the connection portion has a vertical thickness less than a vertical thickness of the pad portion, and one or more first insulating rings on the connection portion.
