18492093. SEMICONDUCTOR MEMORY DEVICES simplified abstract (Samsung Electronics Co., Ltd.)
Contents
- 1 SEMICONDUCTOR MEMORY DEVICES
SEMICONDUCTOR MEMORY DEVICES
Organization Name
Inventor(s)
Jaecheon Yong of Suwon-si (KR)
SEMICONDUCTOR MEMORY DEVICES - A simplified explanation of the abstract
This abstract first appeared for US patent application 18492093 titled 'SEMICONDUCTOR MEMORY DEVICES
Simplified Explanation
The semiconductor memory device described in the patent application includes a unique structure with a semiconductor protrusion structure and a gate structure covering it. The device also features a cell capacitor, a bit line, and a drain layer, all arranged in specific directions on the substrate.
- The semiconductor memory device includes a source layer, a semiconductor layer with a protrusion structure, a drain layer, a cell capacitor, a bit line, and a gate structure.
- The gate structure covers the semiconductor protrusion structure and includes a gate dielectric film and a gate electrode film.
- The end portion of the semiconductor protrusion structure facing the drain layer has a greater thickness than the end portion facing the source layer.
Potential Applications
This technology could be applied in:
- High-speed computing devices
- Data storage systems
- Mobile devices
Problems Solved
This technology helps address:
- Increasing demand for faster and more efficient memory devices
- Need for higher storage capacity in smaller devices
Benefits
The benefits of this technology include:
- Improved performance and speed of semiconductor memory devices
- Enhanced storage capacity and reliability
- Potential for smaller and more compact memory solutions
Potential Commercial Applications
The potential commercial applications of this technology could include:
- Memory chip manufacturing companies
- Electronics manufacturers
- Research institutions
Possible Prior Art
One possible prior art for this technology could be:
- Previous semiconductor memory devices with similar structures and configurations
Unanswered Questions
How does this technology compare to existing memory devices in terms of speed and efficiency?
This article does not provide a direct comparison with existing memory devices in terms of speed and efficiency. Further research or testing may be needed to determine the exact performance benefits of this technology.
What are the potential limitations or drawbacks of implementing this technology in practical applications?
The article does not discuss any potential limitations or drawbacks of implementing this technology in practical applications. Additional studies or real-world testing may be necessary to identify any challenges that could arise from using this technology.
Original Abstract Submitted
A semiconductor memory device includes a source layer, a semiconductor layer including a semiconductor protrusion structure, and a drain layer arranged in a first horizontal direction on a substrate, a cell capacitor extending in the first horizontal direction on the substrate and including a lower electrode layer, a capacitor dielectric film, and an upper electrode layer connected to the drain layer, a bit line extending in a vertical direction on the substrate and connected to the source layer, and a gate structure covering the semiconductor protrusion structure and including a gate dielectric film on the semiconductor protrusion structure and a gate electrode film on the gate dielectric film. A value of a first thickness of an end portion of the semiconductor protrusion structure facing the drain layer is greater than a value of a second thickness of another end portion of the semiconductor protrusion structure facing the source layer.
