18491802. SILICON CARBIDE SEMICONDUCTOR DEVICE simplified abstract (FUJI ELECTRIC CO., LTD.)
Contents
SILICON CARBIDE SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Masakazu Baba of Matsumoto-city (JP)
SILICON CARBIDE SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18491802 titled 'SILICON CARBIDE SEMICONDUCTOR DEVICE
The patent application describes a silicon carbide semiconductor device with a transistor portion and a diode portion.
- The device includes a semiconductor substrate with trench portions on the front surface.
- It features a drift region of a first conductivity type on the substrate.
- A second conductivity type region covers the side wall and bottom of a trench portion in the diode section.
- The transistor and diode portions are arranged alternately along the trench portions in a mesa portion.
Key Features and Innovation:
- Integration of transistor and diode portions in a silicon carbide semiconductor device.
- Alternating arrangement of transistor and diode portions along trench portions for efficient design.
Potential Applications:
- Power electronics
- Renewable energy systems
- Electric vehicles
Problems Solved:
- Improved efficiency in power conversion
- Enhanced performance in high-temperature environments
Benefits:
- Higher power density
- Increased reliability
- Better thermal management
Commercial Applications:
- Power inverters
- Motor drives
- Solar inverters
Questions about Silicon Carbide Semiconductor Device: 1. How does the alternating arrangement of transistor and diode portions improve device performance? 2. What are the specific advantages of using silicon carbide in this semiconductor device?
Frequently Updated Research: Ongoing studies focus on optimizing the design of silicon carbide semiconductor devices for even higher efficiency and performance.
Original Abstract Submitted
Provided is a silicon carbide semiconductor device comprising a transistor portion and a diode portion, comprising: a semiconductor substrate; a plurality of trench portions that are provided on a front surface of the semiconductor substrate; a drift region of a first conductivity type that is provided on the semiconductor substrate; and a second conductivity type region that covers a side wall and a bottom of a trench portion in the diode portion; wherein the transistor portion and the diode portion are alternately arrayed along an extending direction of the trench portion in a mesa portion that is sandwiched between the plurality of trench portions.
