18489220. INTEGRATED CIRCUIT DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
Contents
- 1 INTEGRATED CIRCUIT DEVICE
INTEGRATED CIRCUIT DEVICE
Organization Name
Inventor(s)
INTEGRATED CIRCUIT DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18489220 titled 'INTEGRATED CIRCUIT DEVICE
Simplified Explanation
The integrated circuit device described in the patent application includes a substrate with multiple fins extending in a horizontal direction, source/drain areas on the fins, a back side contact between the fins, and a back side conductive layer connected to the back side contact.
- The device features multiple fins spaced apart from each other and extending in a horizontal direction.
- Source/drain areas are located on the fins for electrical connections.
- A back side contact is present between the fins, connected to the source/drain areas.
- A back side conductive layer extends in the horizontal direction and is connected to the back side contact.
Potential Applications
This technology could be used in:
- Semiconductor manufacturing
- Electronics industry
- Integrated circuit design
Problems Solved
This technology helps in:
- Improving electrical connections in integrated circuits
- Enhancing performance and efficiency of semiconductor devices
Benefits
The benefits of this technology include:
- Enhanced electrical connectivity
- Improved overall performance of integrated circuits
- Increased efficiency in semiconductor devices
Potential Commercial Applications
The potential commercial applications of this technology could be:
- Manufacturing of advanced electronic devices
- Production of high-performance integrated circuits
- Development of cutting-edge semiconductor technologies
Possible Prior Art
One possible prior art for this technology could be the use of back side contacts in semiconductor devices to improve electrical connections and performance.
Unanswered Questions
How does this technology compare to existing back side contact designs in terms of efficiency and performance?
This article does not provide a direct comparison with existing back side contact designs in terms of efficiency and performance. Further research and testing would be needed to determine the advantages of this technology over existing designs.
What are the potential challenges in implementing this technology on a large scale in semiconductor manufacturing processes?
The article does not address the potential challenges in implementing this technology on a large scale in semiconductor manufacturing processes. Factors such as cost, scalability, and compatibility with existing manufacturing techniques could pose challenges that need to be explored further.
Original Abstract Submitted
The integrated circuit device includes a substrate, a first fin extending in a first horizontal direction on the substrate, a second fin and a third fin spaced apart from each other in the first horizontal direction and extending in the first horizontal direction, a second source/drain area on the second fin and the third fin, a back side contact between the second fin and the third fin and electrically connected to the second source/drain area, and a back side conductive layer extending in the first horizontal direction and electrically connected to the back side contact. The back side contact includes a first portion protruding from the substrate and a second portion that is coplanar, in a vertical direction, with the substrate. A width of the second portion in the second horizontal direction is greater than a width of the first portion in the second horizontal direction.
