18489034. INTEGRATED CIRCUIT DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
Contents
INTEGRATED CIRCUIT DEVICE
Organization Name
Inventor(s)
Chanhoon Park of Suwon-si (KR)
Seunghoon Kim of Suwon-si (KR)
INTEGRATED CIRCUIT DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18489034 titled 'INTEGRATED CIRCUIT DEVICE
The abstract of this patent application describes an integrated circuit device with specific features, including insulating spacers on bit line structures, a buried contact connected to the active area, an insulation capping pattern, and a landing pad overlapping the bit line structure.
- Insulating spacers are present on the sidewalls of the bit line structures.
- A buried contact is electrically connected to the active area.
- An insulation capping pattern covers a bit line structure.
- A landing pad, connected to the buried contact, overlaps the bit line structure.
- The uppermost surface of the landing pad is higher than that of the insulation capping pattern.
Potential Applications: - This technology can be used in the development of advanced integrated circuit devices. - It may find applications in the semiconductor industry for memory storage and processing units.
Problems Solved: - Enhances the electrical connectivity and performance of integrated circuit devices. - Improves the efficiency and reliability of data storage and processing.
Benefits: - Increased functionality and performance of integrated circuits. - Enhanced electrical connectivity and signal transmission. - Improved reliability and efficiency in data storage and processing.
Commercial Applications: Title: Advanced Integrated Circuit Devices for Enhanced Performance This technology can be utilized in the production of high-performance memory storage devices, processors, and other semiconductor components. It has the potential to revolutionize the semiconductor industry by improving the efficiency and reliability of integrated circuits.
Questions about the technology: 1. How does the presence of insulating spacers on bit line structures impact the performance of the integrated circuit device? 2. What advantages does the buried contact provide in terms of electrical connectivity and signal transmission within the device?
Original Abstract Submitted
An integrated circuit device includes a substrate having an active area, a plurality of bit line structures on the substrate, the plurality of bit line structures including insulating spacers on sidewalls thereof, a buried contact between the plurality of bit line structures and electrically connected to the active area, an insulation capping pattern on a bit line structure of the plurality of bit line structures, and a landing pad electrically connected to the buried contact, the landing pad arranged to vertically overlap the bit line structure on the insulation capping pattern, wherein an uppermost surface of the landing pad is higher than an uppermost surface of the insulation capping pattern, relative to the substrate.
