18489028. SEMICONDUCTOR MODULE simplified abstract (FUJI ELECTRIC CO., LTD.)

SEMICONDUCTOR MODULE

Organization Name

FUJI ELECTRIC CO., LTD.

Inventor(s)

Takashi Tsuji of Matsumoto-city (JP)

SEMICONDUCTOR MODULE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18489028 titled 'SEMICONDUCTOR MODULE

Simplified Explanation: The semiconductor module described in the patent application consists of multiple SiC chips connected in parallel, each containing a MOSFET and a parasitic transistor. A control unit manages the switching of the MOSFET in each SiC chip, ensuring a rapid turn-off time when the parasitic transistor is activated.

• Key Features and Innovation:

   - Semiconductor module with SiC chips in parallel configuration.
   - Each SiC chip includes a MOSFET and a parasitic transistor.
   - Control unit regulates MOSFET switching for quick turn-off times.
   - Focus on reducing turn-off time to 0.9 μs or less in the presence of the parasitic transistor.

• Potential Applications:

   - Power electronics
   - Electric vehicles
   - Renewable energy systems

• Problems Solved:

   - Improving efficiency in power electronics
   - Enhancing performance in electric vehicles
   - Increasing reliability in renewable energy applications

• Benefits:

   - Faster switching speeds
   - Higher efficiency
   - Improved overall system performance

• Commercial Applications:

   - This technology could be utilized in industries such as automotive, renewable energy, and industrial automation for enhanced power management and control.

• Prior Art:

   - Researchers and engineers can explore prior patents related to SiC chip configurations, MOSFET control, and parasitic transistor mitigation in semiconductor modules.

• Frequently Updated Research:

   - Stay informed about advancements in SiC chip technology, MOSFET control algorithms, and semiconductor module design for power electronics applications.

Questions about SiC Chips with MOSFET and Parasitic Transistor:

1. What are the main advantages of using SiC chips with MOSFET and parasitic transistors in semiconductor modules?

  - The main advantages include faster switching speeds, higher efficiency, and improved system performance due to the control unit's regulation of the MOSFETs.

2. How does the control unit ensure a rapid turn-off time of 0.9 μs or less in the presence of the parasitic transistor in each SiC chip?

  - The control unit optimizes the switching process of the MOSFETs to minimize turn-off times when the parasitic transistor is activated, enhancing the overall efficiency of the semiconductor module.

Original Abstract Submitted

Provided is a semiconductor module including a plurality of SiC chips electrically connected in parallel and each having a MOSFET and a parasitic transistor formed therein, and a control unit which controls switching of the MOSFET in each of the SiC chips, and for all of the plurality of SiC chips, at least in a state where the parasitic transistor is turned on, the control unit controls, to 0.9 μs or less, a turn-off time of the MOSFET corresponding.