18488718. LARGE-AREA III-V SEMICONDUCTOR LAYER TRANSFERRING METHOD simplified abstract (ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE)
Contents
LARGE-AREA III-V SEMICONDUCTOR LAYER TRANSFERRING METHOD
Organization Name
ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
Inventor(s)
Daemyeong Geum of Daejeon (KR)
LARGE-AREA III-V SEMICONDUCTOR LAYER TRANSFERRING METHOD - A simplified explanation of the abstract
This abstract first appeared for US patent application 18488718 titled 'LARGE-AREA III-V SEMICONDUCTOR LAYER TRANSFERRING METHOD
The large-area III-V semiconductor layer transferring method involves the formation of III-V semiconductor dies on a lower substrate, followed by the creation of dielectric patterns on the dies and exposed areas of the lower substrate. A lower III-V semiconductor layer is then formed on the dielectric patterns and semiconductor dies, with a sacrificial layer and an upper III-V semiconductor layer subsequently added. The process concludes with the bonding of an upper substrate onto the III-V semiconductor layer and the removal of the sacrificial layer.
- Formation of III-V semiconductor dies on a lower substrate
- Creation of dielectric patterns on the semiconductor dies and exposed areas of the lower substrate
- Deposition of lower III-V semiconductor layer on the dielectric patterns and semiconductor dies
- Addition of sacrificial layer and upper III-V semiconductor layer
- Bonding of upper substrate onto the III-V semiconductor layer
- Removal of the sacrificial layer
Potential Applications: - Semiconductor manufacturing - Optoelectronic device production - Photovoltaic cell fabrication
Problems Solved: - Facilitates the transfer of large-area III-V semiconductor layers - Enhances the efficiency of semiconductor manufacturing processes
Benefits: - Improved scalability in semiconductor production - Enhanced performance of optoelectronic devices - Increased yield in photovoltaic cell manufacturing
Commercial Applications: Title: Advanced Semiconductor Layer Transfer Method for Enhanced Manufacturing Efficiency This technology can be utilized in the production of various semiconductor devices, optoelectronic components, and solar panels, leading to increased productivity and cost-effectiveness in the manufacturing industry.
Questions about III-V Semiconductor Layer Transferring Method: 1. How does this method improve the efficiency of semiconductor manufacturing processes? This method streamlines the transfer of large-area III-V semiconductor layers, reducing production time and costs significantly.
2. What are the potential applications of this technology beyond semiconductor manufacturing? In addition to semiconductor production, this method can be applied in the fabrication of optoelectronic devices and photovoltaic cells, expanding its utility across different industries.
Original Abstract Submitted
Disclosed is a large-area III-V semiconductor layer transferring method. The large-area III-V semiconductor layer transferring method includes: forming III-V semiconductor dies on a lower substrate; forming dielectric patterns on the III-V semiconductor dies and the lower substrate exposed between the III-V semiconductor dies; forming a lower III-V semiconductor layer on the dielectric patterns and the III-V semiconductor dies; forming a sacrificial layer on the lower III-V semiconductor layer; forming an upper III-V semiconductor layer on the sacrificial layer; bonding an upper substrate onto the III-V semiconductor layer; and removing the sacrificial layer.
