18487625. VERTICAL CHANNEL THIN FILM TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME simplified abstract (ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE)
Contents
VERTICAL CHANNEL THIN FILM TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME
Organization Name
ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
Inventor(s)
Jong-Heon Yang of Daejeon (KR)
VERTICAL CHANNEL THIN FILM TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18487625 titled 'VERTICAL CHANNEL THIN FILM TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME
The method described in the patent application is for manufacturing a vertical channel thin film transistor. This method involves several steps, including forming source drain electrodes, interlayer insulating layers, channel layers, gate insulating layers, and gate electrodes.
- Formation of bottom source drain electrode
- Formation of first interlayer insulating layer
- Formation of first middle source drain electrodes
- Formation of second interlayer insulating layer
- Formation of top source drain electrode
- Formation of opening to expose electrodes
- Formation of channel layers
- Formation of gate insulating layer
- Formation of gate electrodes
Potential Applications: - Display technology - Integrated circuits - Electronic devices
Problems Solved: - Improved performance of thin film transistors - Enhanced reliability and stability
Benefits: - Higher efficiency - Better functionality - Increased durability
Commercial Applications: - Display panels - Consumer electronics - Semiconductor industry
Questions about Vertical Channel Thin Film Transistor: 1. How does the vertical channel thin film transistor differ from traditional transistors? 2. What are the key advantages of using vertical channel thin film transistors in electronic devices?
Frequently Updated Research: - Ongoing studies on optimizing the manufacturing process of vertical channel thin film transistors - Research on improving the performance and reliability of these transistors.
Original Abstract Submitted
Provided is a method for manufacturing a vertical channel thin film transistor. The method for manufacturing the vertical channel thin film transistor includes forming a bottom source drain electrode, forming a first interlayer insulating layer, forming first middle source drain electrodes, forming a second interlayer insulating layer, forming a top source drain electrode, forming an opening through which portions of the bottom source drain electrode, the first middle source drain electrodes, and the top source drain electrode are exposed, forming channel layers, forming a gate insulating layer on the channel layers, the bottom source drain electrode, the first middle source drain electrodes, and the top source drain electrode, and forming gate electrodes on the gate insulating layer.
