18487275. ELECTRONIC DEVICE AND METHOD OF MANUFACTURING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)

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ELECTRONIC DEVICE AND METHOD OF MANUFACTURING THE SAME

Organization Name

SAMSUNG ELECTRONICS CO., LTD.

Inventor(s)

Jinseong Heo of Seoul (KR)

Sangwook Kim of Seongnam-si (KR)

Yunseong Lee of Osan-si (KR)

Sanghyun Jo of Seoul (KR)

Hyangsook Lee of Suwon-si (KR)

ELECTRONIC DEVICE AND METHOD OF MANUFACTURING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 18487275 titled 'ELECTRONIC DEVICE AND METHOD OF MANUFACTURING THE SAME

Simplified Explanation

The abstract describes an electronic device and a method of manufacturing it. The device includes a ferroelectric crystallization layer, a gate electrode, and a crystallization prevention layer. The ferroelectric crystallization layer is partially crystallized and made of a dielectric material with ferroelectricity or anti-ferroelectricity. The crystallization prevention layer prevents the spread of crystallization in the ferroelectric crystallization layer towards the substrate.

  • The electronic device includes a ferroelectric crystallization layer, gate electrode, and crystallization prevention layer.
  • The ferroelectric crystallization layer is partially crystallized and made of a dielectric material with ferroelectricity or anti-ferroelectricity.
  • The crystallization prevention layer prevents the spread of crystallization in the ferroelectric crystallization layer towards the substrate.

Potential applications of this technology:

  • Memory devices: The ferroelectric crystallization layer can be used in memory devices to store and retrieve data.
  • Sensors: The electronic device can be used in sensors to detect and measure various parameters.
  • Energy storage: The ferroelectric crystallization layer can be utilized in energy storage devices for efficient energy storage and retrieval.

Problems solved by this technology:

  • Crystallization prevention: The crystallization prevention layer prevents the spread of crystallization in the ferroelectric crystallization layer, ensuring its stability and performance.
  • Substrate protection: The crystallization prevention layer protects the substrate from the effects of crystallization, enhancing the device's durability.

Benefits of this technology:

  • Improved performance: The ferroelectric crystallization layer with its dielectric material enhances the device's performance and functionality.
  • Enhanced durability: The crystallization prevention layer protects the substrate, increasing the device's lifespan.
  • Versatile applications: The electronic device can be used in various applications such as memory devices, sensors, and energy storage, providing versatility and adaptability.


Original Abstract Submitted

Provided are an electronic device and a method of manufacturing the same. The electronic device includes a ferroelectric crystallization layer between a substrate and a gate electrode and a crystallization prevention layer between the substrate and the ferroelectric crystallization layer. The ferroelectric crystallization layer is at least partially crystallized and includes a dielectric material having ferroelectricity or anti-ferroelectricity. Also, the crystallization prevention layer prevents crystallization in the ferroelectric crystallization layer from being spread toward the substrate.

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