18486926. IMAGE SENSOR WITH REDUCED LEAKAGE CURRENT simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)

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IMAGE SENSOR WITH REDUCED LEAKAGE CURRENT

Organization Name

SAMSUNG ELECTRONICS CO., LTD.

Inventor(s)

Hyunpil Noh of Seongnam-si (KR)

IMAGE SENSOR WITH REDUCED LEAKAGE CURRENT - A simplified explanation of the abstract

This abstract first appeared for US patent application 18486926 titled 'IMAGE SENSOR WITH REDUCED LEAKAGE CURRENT

Simplified Explanation

The abstract describes an image sensor that includes a semiconductor substrate with a photoelectric conversion region. It also has a buried gate structure in a trench, a floating diffusion region, a contact pad with polysilicon, an intermediate layer with metal silicide, and a contact extending in a vertical direction.

  • The image sensor includes a buried gate structure in a trench, which helps in the conversion of light into electrical signals.
  • The floating diffusion region is located on one side of the buried gate structure and aids in the collection of charge.
  • The contact pad, made of polysilicon, is positioned above the floating diffusion region and allows for electrical connections.
  • An intermediate layer with metal silicide is placed on the contact pad, providing a conductive surface.
  • A contact is present on the intermediate layer, extending vertically, to establish electrical connections.

Potential applications of this technology:

  • Image sensors are commonly used in digital cameras, smartphones, and other devices to capture and process images.
  • This image sensor innovation could improve the performance and efficiency of image sensors in various consumer electronic devices.
  • It may also find applications in surveillance systems, medical imaging devices, and automotive cameras.

Problems solved by this technology:

  • The buried gate structure helps in reducing noise and improving the sensitivity of the image sensor.
  • The floating diffusion region aids in the collection of charge, enhancing the overall performance of the image sensor.
  • The use of metal silicide in the intermediate layer improves the conductivity and reliability of the contact pad.

Benefits of this technology:

  • Improved image quality and sensitivity due to reduced noise.
  • Enhanced performance and efficiency of image sensors.
  • Increased reliability and conductivity of electrical connections.
  • Potential for smaller and more compact image sensor designs.


Original Abstract Submitted

An image sensor may include; a semiconductor substrate including a first surface and a second surface, and further including a photoelectric conversion region, a buried gate structure disposed in a buried gate trench extending into the semiconductor substrate from the first surface of the semiconductor substrate, a floating diffusion region disposed on one side of the buried gate structure in the semiconductor substrate, a contact pad disposed on the first surface of the semiconductor substrate above the floating diffusion region and including polysilicon, an intermediate layer disposed on the contact pad and including a metal silicide, and a contact disposed on the intermediate layer and extending in a vertical direction perpendicular to the first surface of the semiconductor substrate.

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