18486528. SEMICONDUCTOR DEVICE simplified abstract (Kabushiki Kaisha Toshiba)
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Shunta Murai of Kanazawa Ishikawa (JP)
Daiki Yoshikawa of Kanazawa Ishikawa (JP)
Kazutoshi Nakamura of Nonoichi Ishikawa (JP)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18486528 titled 'SEMICONDUCTOR DEVICE
The semiconductor device described in the abstract includes various components such as electrodes, semiconductor regions of different conductivity types, gate electrode, and insulating layers.
- The device consists of first and second electrodes, first and second regions, and a gate electrode.
- The first region contains semiconductor regions of different conductivity types, along with a gate insulating layer.
- A conductive part is electrically connected to the second electrode and faces one of the semiconductor regions via an insulating layer.
- The device also includes fourth and sixth semiconductor regions located on the plurality of third semiconductor regions.
Potential Applications: - This semiconductor device could be used in various electronic applications requiring precise control of electrical conductivity. - It may find applications in power electronics, integrated circuits, and other semiconductor-based technologies.
Problems Solved: - The device addresses the need for efficient and reliable control of electrical conductivity in semiconductor devices. - It provides a solution for optimizing the performance of electronic components in various applications.
Benefits: - Improved control of electrical conductivity. - Enhanced performance and efficiency in electronic devices. - Potential for miniaturization and increased functionality in semiconductor technology.
Commercial Applications: Title: Semiconductor Device for Enhanced Electrical Conductivity Control This technology could have commercial applications in the semiconductor industry for the development of advanced electronic devices with improved performance and efficiency. It may also be utilized in the production of integrated circuits, power electronics, and other semiconductor-based products.
Prior Art: Readers interested in exploring prior art related to this technology can start by researching semiconductor devices, gate electrodes, and conductive parts in the field of semiconductor engineering.
Frequently Updated Research: Stay updated on the latest research in semiconductor device technology, advancements in electrical conductivity control, and innovations in semiconductor materials to enhance the performance of electronic devices.
Questions about Semiconductor Devices: 1. What are the key factors influencing the efficiency of electrical conductivity control in semiconductor devices? 2. How does the design of the gate electrode impact the performance of semiconductor devices?
Original Abstract Submitted
According to one embodiment, a semiconductor device includes first and second electrodes, and first and second regions. The first region includes a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type, a plurality of third semiconductor regions of the first conductivity type, a gate electrode, a conductive part, a fourth semiconductor region of the second conductivity type, a fifth semiconductor region of the first conductivity type, and a sixth semiconductor region of the second conductivity type. The gate electrode faces one of the plurality of third semiconductor regions via a gate insulating layer. The conductive part faces another one of the plurality of third semiconductor regions via an insulating layer, and is electrically connected with the second electrode. The fourth and six semiconductor regions are located on the one and the other one of the plurality of third semiconductor regions, respectively.
