18486493. DOMAIN SWITCHING DEVICES AND METHODS OF MANUFACTURING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
DOMAIN SWITCHING DEVICES AND METHODS OF MANUFACTURING THE SAME
Organization Name
Inventor(s)
Sangwook Kim of Seongnam-si (KR)
DOMAIN SWITCHING DEVICES AND METHODS OF MANUFACTURING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18486493 titled 'DOMAIN SWITCHING DEVICES AND METHODS OF MANUFACTURING THE SAME
Simplified Explanation
The abstract describes a domain switching device that includes various layers and regions to enable switching between different states. Here is a simplified explanation of the abstract:
- The device consists of a channel region, a source region, and a drain region connected to the channel region.
- A gate electrode is isolated from the channel region, meaning it does not directly contact it.
- An anti-ferroelectric layer is placed between the channel region and the gate electrode.
- A conductive layer is present between the gate electrode and the anti-ferroelectric layer to make contact with the anti-ferroelectric layer.
- A barrier layer is positioned between the anti-ferroelectric layer and the channel region.
Potential applications of this technology:
- Memory devices: The domain switching device can be used in memory devices to store and retrieve information.
- Logic circuits: It can be utilized in logic circuits to perform various computational tasks.
- Data storage: The device can be employed in data storage systems to store and retrieve data.
Problems solved by this technology:
- Switching speed: The domain switching device offers faster switching speeds compared to traditional devices, enabling quicker data processing.
- Energy efficiency: It provides improved energy efficiency, reducing power consumption and extending battery life.
- Reliability: The device enhances the reliability of memory and logic circuits by offering stable and consistent performance.
Benefits of this technology:
- Faster data processing: The device enables faster switching between different states, leading to quicker data processing.
- Lower power consumption: It offers improved energy efficiency, resulting in reduced power consumption.
- Enhanced reliability: The device provides stable and consistent performance, enhancing the reliability of memory and logic circuits.
Original Abstract Submitted
A domain switching device includes a channel region, a source region and a drain region connected to the channel region, a gate electrode isolated from contact with the channel region, an anti-ferroelectric layer between the channel region and the gate electrode, a conductive layer between the gate electrode and the anti-ferroelectric layer to contact the anti-ferroelectric layer, and a barrier layer between the anti-ferroelectric layer and the channel region.
