18482233. IMAGE SENSOR AND METHOD OF OPERATING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)

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IMAGE SENSOR AND METHOD OF OPERATING THE SAME

Organization Name

SAMSUNG ELECTRONICS CO., LTD.

Inventor(s)

Munhwan Kim of Seoul (KR)

Youngsun Oh of Hwaseong-si (KR)

Jongyoon Shin of Suwon-si (KR)

Honghyun Jeon of Suwon-si (KR)

Hana Choi of Seongnam-si (KR)

IMAGE SENSOR AND METHOD OF OPERATING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 18482233 titled 'IMAGE SENSOR AND METHOD OF OPERATING THE SAME

Simplified Explanation

The abstract describes an image sensor and its method of operation. Here is a simplified explanation of the abstract:

  • The image sensor is made up of a semiconductor substrate with a first conductivity type.
  • It includes a photoelectric conversion region within the substrate, which is doped to have a second conductivity type.
  • A first floating diffusion region is provided to receive photocharges accumulated in the photoelectric conversion region.
  • A transfer gate electrode is placed between and connected to the first floating diffusion region and the photoelectric conversion region.
  • A dual conversion gain transistor is positioned between and connected to the first floating diffusion region and a second floating diffusion region.
  • A reset transistor is placed between and connected to the second floating diffusion region and a pixel power voltage region.
  • The channel region of the reset transistor has a potential gradient that increases in a direction from the second floating diffusion region towards the pixel power voltage region.

Potential applications of this technology:

  • Digital cameras and smartphones: The image sensor can be used in digital cameras and smartphones to capture high-quality images.
  • Surveillance systems: The image sensor can be utilized in surveillance cameras to capture clear and detailed images.
  • Medical imaging: The image sensor can be employed in medical imaging devices such as X-ray machines and ultrasound scanners to capture accurate and precise images.

Problems solved by this technology:

  • Improved image quality: The image sensor with dual conversion gain transistor and potential gradient in the reset transistor helps in capturing images with better quality and reduced noise.
  • Enhanced sensitivity: The photoelectric conversion region and floating diffusion regions improve the sensor's sensitivity to light, allowing for better low-light performance.
  • Efficient power management: The pixel power voltage region and potential gradient in the reset transistor enable efficient power usage in the image sensor.

Benefits of this technology:

  • Higher image resolution: The image sensor's design and operation contribute to capturing images with higher resolution and finer details.
  • Improved low-light performance: The enhanced sensitivity of the image sensor allows for better image quality even in low-light conditions.
  • Power efficiency: The efficient power management features of the image sensor help in conserving battery life in devices that incorporate it.


Original Abstract Submitted

An image sensor and a method of operating the same are provided. The image sensor includes a semiconductor substrate of a first conductivity type; a photoelectric conversion region provided in the semiconductor substrate and doped to have a second conductivity type; a first floating diffusion region provided to receive photocharges accumulated in the photoelectric conversion region; a transfer gate electrode disposed between and connected to the first floating diffusion region and the photoelectric conversion region; a dual conversion gain transistor disposed between and connected to the first floating diffusion region and a second floating diffusion region; and a reset transistor disposed between and connected to the second floating diffusion region and a pixel power voltage region, wherein a channel region of the reset transistor has a potential gradient increasing in a direction from the second floating diffusion region toward the pixel power voltage region.