18481404. NONVOLATILE MEMORY DEVICE AND MEMORY SYSTEM INCLUDING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
Contents
NONVOLATILE MEMORY DEVICE AND MEMORY SYSTEM INCLUDING THE SAME
Organization Name
Inventor(s)
NONVOLATILE MEMORY DEVICE AND MEMORY SYSTEM INCLUDING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18481404 titled 'NONVOLATILE MEMORY DEVICE AND MEMORY SYSTEM INCLUDING THE SAME
The abstract describes a nonvolatile memory device with a peripheral circuit structure and a cell array structure. The cell array structure includes various layers and structures for storing data.
- Peripheral circuit structure with insulating structure covering it
- Cell array structure bonded to the peripheral circuit structure
- Common source line layer, buffer insulating layer, contact stop layers, cell stack, cell channel structures, and contact structures in the cell array structure
- Second insulating structure covering the cell stack
Potential Applications: - Nonvolatile memory devices in electronic devices - Data storage in various industries such as telecommunications, automotive, and healthcare
Problems Solved: - Efficient data storage and retrieval in nonvolatile memory devices - Integration of peripheral circuit and cell array structures for improved performance
Benefits: - Enhanced data storage capacity - Faster data access speeds - Improved overall performance of nonvolatile memory devices
Commercial Applications: Title: Nonvolatile Memory Device for Enhanced Data Storage This technology can be used in various electronic devices such as smartphones, laptops, and servers to improve data storage capabilities. The market implications include increased demand for high-capacity memory solutions in the consumer electronics industry.
Prior Art: Readers can explore prior patents related to nonvolatile memory devices, peripheral circuit structures, and cell array structures to understand the evolution of this technology.
Frequently Updated Research: Researchers are constantly working on improving the efficiency and performance of nonvolatile memory devices. Stay updated on the latest advancements in materials science, semiconductor technology, and data storage solutions.
Questions about Nonvolatile Memory Devices: 1. How does the cell array structure impact the performance of nonvolatile memory devices? The cell array structure plays a crucial role in storing and retrieving data efficiently in nonvolatile memory devices by organizing the memory cells in a structured manner.
2. What are the key differences between nonvolatile memory devices and volatile memory devices? Nonvolatile memory devices retain data even when power is turned off, while volatile memory devices lose data when power is removed. This distinction is important for applications requiring persistent data storage.
Original Abstract Submitted
A nonvolatile memory device includes a peripheral circuit structure including a peripheral circuit and a first insulating structure covering the peripheral circuit and a cell array structure bonded to the peripheral circuit structure and including a cell region and a connection region, wherein the cell array structure includes a common source line layer, a buffer insulating layer on the common source line layer, a plurality of contact stop layers buried in the buffer insulating layer, a cell stack which includes a plurality of gate electrodes and a plurality of insulating layers alternately stacked on the buffer insulating layer, a plurality of cell channel structures extending to the common source line layer by passing through the cell stack, a plurality of contact structures each connected to one or more of the plurality of gate electrodes, and a second insulating structure covering the cell stack.
