18479591. SEMICONDUCTOR MEMORY DEVICES AND ELECTRONIC SYSTEMS INCLUDING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
Contents
SEMICONDUCTOR MEMORY DEVICES AND ELECTRONIC SYSTEMS INCLUDING THE SAME
Organization Name
Inventor(s)
Jung Min Park of Suwon-si (KR)
SEMICONDUCTOR MEMORY DEVICES AND ELECTRONIC SYSTEMS INCLUDING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18479591 titled 'SEMICONDUCTOR MEMORY DEVICES AND ELECTRONIC SYSTEMS INCLUDING THE SAME
Simplified Explanation
The semiconductor memory device described in the abstract includes a unique channel structure with specific crystalline films and matrices, as well as impurities. Here are some key points to explain the patent/innovation:
- The memory device has a mold structure with gate electrodes and mold insulating films stacked on a substrate.
- The channel structure within the mold includes a semiconductor pattern and a dielectric film.
- The dielectric film consists of a first crystalline film in contact with the gate electrodes and a second crystalline film between the first crystalline film and the semiconductor pattern.
- The first crystalline film contains a first matrix and a first impurity, while the second crystalline film contains a second matrix and a second impurity.
- The matrices are made of materials such as HfO, HfZrO(0.5<x<1), and HfZrO(0.5<y<1), with impurities making up 10 at % or less of the films.
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- Potential Applications
The technology described in this patent could be applied in various semiconductor memory devices, such as flash memory, DRAM, and SRAM.
- Problems Solved
This innovation addresses the need for improved memory devices with enhanced performance, reliability, and scalability.
- Benefits
The use of specific crystalline films and matrices in the channel structure can lead to increased memory device efficiency, reduced power consumption, and improved data retention.
- Potential Commercial Applications
The technology could be utilized in the production of next-generation memory devices for consumer electronics, data centers, and other high-tech industries.
- Possible Prior Art
Prior art in the field of semiconductor memory devices may include patents or publications related to similar channel structures, dielectric films, or memory device architectures.
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- Unanswered Questions
- How does this technology compare to existing memory device innovations?
The article does not provide a direct comparison with other memory device innovations in terms of performance, reliability, or scalability.
- What are the specific manufacturing processes involved in implementing this technology?
The detailed manufacturing processes for creating the unique channel structure with specific crystalline films and matrices are not discussed in the abstract.
Original Abstract Submitted
A semiconductor memory device comprises, a substrate, a mold structure including gate electrodes and mold insulating films alternately stacked on the substrate, and a channel structure penetrating the mold structure, wherein the channel structure comprises a semiconductor pattern and a dielectric film on the semiconductor pattern, wherein the dielectric film comprises a first crystalline film in contact with the gate electrodes and a second crystalline film between the first crystalline film and the semiconductor pattern, wherein the first crystalline film includes a first matrix and a first impurity and the second crystalline film includes a second matrix and a second impurity, wherein each of the first matrix and the second matrix comprises at least one of HfO, HfZrO(0.5<x<1) and HfZrO(0.5<y<1), and wherein each of the first impurity and the second impurity is 10 at % or less of the first crystalline film and second crystalline film, respectively.
