18478776. SEMICONDUCTOR DEVICE INCLUDING CHALCOGEN COMPOUND AND SEMICONDUCTOR APPARATUS INCLUDING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)

SEMICONDUCTOR DEVICE INCLUDING CHALCOGEN COMPOUND AND SEMICONDUCTOR APPARATUS INCLUDING THE SAME

Organization Name

SAMSUNG ELECTRONICS CO., LTD.

Inventor(s)

Wooyoung Yang of Suwon-si (KR)

Bonwon Koo of Suwon-si (KR)

Chungman Kim of Suwon-si (KR)

Kwangmin Park of Seoul (KR)

Hajun Sung of Hwaseong-si (KR)

Dongho Ahn of Hwaseong-si (KR)

Changseung Lee of Yongin-si (KR)

Minwoo Choi of Hwaseong-si (KR)

SEMICONDUCTOR DEVICE INCLUDING CHALCOGEN COMPOUND AND SEMICONDUCTOR APPARATUS INCLUDING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 18478776 titled 'SEMICONDUCTOR DEVICE INCLUDING CHALCOGEN COMPOUND AND SEMICONDUCTOR APPARATUS INCLUDING THE SAME

Simplified Explanation

The abstract describes a patent application for a chalcogen compound layer that exhibits ovonic threshold switching characteristics. The invention includes a switching device, a semiconductor device, and/or a semiconductor apparatus that incorporates this chalcogen compound layer.

• The switching device and/or semiconductor device may consist of two or more chalcogen compound layers with different energy band gaps.
• Alternatively, the switching device and/or semiconductor device may include a chalcogen compound layer with a concentration gradient of boron (B), aluminum (Al), scandium (Sc), manganese (Mn), strontium (Sr), and/or indium (In) in the thickness direction.
• The invention aims to provide stable switching characteristics with a low off-current value (leakage current value).

Potential applications of this technology:

• Memory devices: The ovonic threshold switching characteristics of the chalcogen compound layer can be utilized in non-volatile memory devices.
• Logic devices: The switching device can be used in logic circuits for efficient data processing.
• Sensor devices: The semiconductor apparatus incorporating this technology can be employed in various sensor applications.

Problems solved by this technology:

• Unstable switching behavior: The invention provides stable switching characteristics, ensuring reliable operation of the switching device or semiconductor device.
• High off-current value: The technology aims to reduce the off-current value (leakage current value), leading to improved energy efficiency.

Benefits of this technology:

• Improved reliability: The stable switching characteristics of the chalcogen compound layer enhance the overall reliability of the switching device or semiconductor device.
• Energy efficiency: The low off-current value reduces power consumption, making the technology more energy-efficient.
• Versatility: The technology can be applied to various devices, including memory, logic, and sensor devices, expanding its potential applications.

Original Abstract Submitted

A chalcogen compound layer exhibiting ovonic threshold switching characteristics, a switching device, a semiconductor device, and/or a semiconductor apparatus including the same are provided. The switching device and/or the semiconductor device may include two or more chalcogen compound layers having different energy band gaps. Alternatively, the switching device and/or semiconductor device may include a chalcogen compound layer having a concentration gradient of an element of boron (B), aluminum (Al), scandium (Sc), manganese (Mn), strontium (Sr), and/or indium (In) in a thickness direction thereof. The switching device and/or a semiconductor device may exhibit stable switching characteristics while having a low off-current value (leakage current value).