18476688. INTEGRATED CIRCUIT DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
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INTEGRATED CIRCUIT DEVICE
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Inventor(s)
INTEGRATED CIRCUIT DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18476688 titled 'INTEGRATED CIRCUIT DEVICE
The abstract describes an integrated circuit device with two transistors of different conductivity types, each with a channel region and a source/drain region. The device includes contact structures that extend vertically from above the source/drain regions.
- The device includes a first transistor with a first conductivity type and a second transistor with a second conductivity type.
- Each transistor has a channel region and a source/drain region.
- The first contact structure contacts the first source/drain region and extends vertically by a first distance.
- The second contact structure contacts the second source/drain region and extends vertically by a second distance greater than the first distance.
Potential Applications: - This technology could be used in the development of advanced integrated circuits for various electronic devices. - It may find applications in the semiconductor industry for improving the performance of electronic components.
Problems Solved: - The technology addresses the need for efficient contact structures in integrated circuit devices. - It provides a solution for optimizing the vertical extension of contact structures in transistors.
Benefits: - Improved performance and efficiency of integrated circuit devices. - Enhanced functionality and reliability of electronic components.
Commercial Applications: Title: Advanced Integrated Circuit Technology for Enhanced Performance This technology could have commercial applications in the semiconductor industry for the development of high-performance electronic devices. It may also be utilized in the production of advanced computing systems and communication devices.
Questions about the technology: 1. How does the vertical extension of contact structures impact the performance of integrated circuit devices? 2. What are the potential challenges in implementing this technology in mass production of electronic components?
Frequently Updated Research: Stay updated on the latest advancements in integrated circuit technology to explore new possibilities for enhancing the performance of electronic devices.
Original Abstract Submitted
An integrated circuit device includes a first transistor comprising a first conductivity type, which includes a first channel region and a first source/drain region, a second transistor comprising a second conductivity type, which includes a second channel region and a second source/drain region, a first contact structure that contacts the first source/drain region and comprising a first length, and the first contact structure extends from above the first source/drain region and beyond an uppermost surface of the first channel region by a first vertical distance, and a second contact structure that contacts the second source/drain region and having a second length that is greater than the first length, the second contact extends from above the second source/drain region and beyond an uppermost surface of the second channel region by a second vertical distance, which is greater than the first vertical distance.
