18476637. IMAGE SENSOR AND METHOD OF MANUFACTURING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)

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IMAGE SENSOR AND METHOD OF MANUFACTURING THE SAME

Organization Name

Samsung Electronics Co., Ltd.

Inventor(s)

YOUNGGU Jin of SUWON-SI (KR)

IMAGE SENSOR AND METHOD OF MANUFACTURING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 18476637 titled 'IMAGE SENSOR AND METHOD OF MANUFACTURING THE SAME

Simplified Explanation

The patent application describes an image sensor with a vertical gate structure that includes a vertical extension and a horizontal extension, a photodiode (PD), a spacer, and a gate insulation layer.

  • The image sensor includes a vertical gate structure with a vertical extension that extends into the substrate and a horizontal extension that runs parallel to the substrate's top surface.
  • A photodiode (PD) is located under the vertical gate within the substrate.
  • A spacer is positioned between the horizontal extension and the substrate.
  • The gate insulation layer covers the bottom and side surfaces of the vertical extension, as well as the bottom surface of the horizontal extension, with the spacer placed between the substrate and the gate insulation layer of the horizontal extension.

Potential Applications

The technology described in the patent application could be applied in:

  • Digital cameras
  • Smartphones
  • Surveillance cameras

Problems Solved

This technology helps in:

  • Improving image sensor performance
  • Enhancing image quality
  • Reducing noise in captured images

Benefits

The benefits of this technology include:

  • Higher resolution images
  • Improved low-light performance
  • Enhanced overall image sensor efficiency

Potential Commercial Applications

The potential commercial applications of this technology could be seen in:

  • Consumer electronics industry
  • Security and surveillance industry
  • Automotive industry

Possible Prior Art

One possible prior art for this technology could be the use of similar gate structures in other types of image sensors, such as CMOS sensors.

Unanswered Questions

How does this technology compare to existing image sensor designs?

The article does not provide a direct comparison with other image sensor designs in terms of performance, cost, or efficiency.

What are the specific manufacturing processes involved in creating this image sensor?

The article does not delve into the detailed manufacturing processes required to produce this specific image sensor design.


Original Abstract Submitted

An image sensor includes a substrate, a vertical gate including a vertical extension vertically extending into the substrate from a top of the substrate, and a horizontal extension extending in parallel with a top surface of the substrate from a top of the vertical extension, a photodiode (PD) disposed under the vertical gate inside the substrate, a spacer disposed between the horizontal extension and the substrate, and a gate insulation layer. A bottom surface and side surfaces of the vertical extension and a bottom surface of the horizontal extension are covered by the gate insulation layer, and the spacer is disposed between the substrate and the gate insulation layer of the horizontal extension.