18475070. NON-VOLATILE MEMORY DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)

NON-VOLATILE MEMORY DEVICE

Organization Name

SAMSUNG ELECTRONICS CO., LTD.

Inventor(s)

Homoon Shin of Suwon-si (KR)

Jonghoon Park of Suwon-si (KR)

Juyoung Yang of Suwon-si (KR)

Jungseok Hwang of Suwon-si (KR)

Sunghoon Kim of Suwon-si (KR)

Pansuk Kwak of Seoul (KR)

Ahreum Kim of Suwon-si (KR)

Myunghun Lee of Suwon-si (KR)

Changyeon Yu of Suwon-si (KR)

Mookyu Bae of Suwon-si (KR)

Sungun Lee of Suwon-si (KR)

NON-VOLATILE MEMORY DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18475070 titled 'NON-VOLATILE MEMORY DEVICE

The abstract describes a non-volatile memory device with a unique structure that includes a memory cell region and a peripheral circuit region below it.

• The memory cell region consists of vertical channel structures, a metal layer, a capping layer, an upper insulation layer, and dummy contacts for hydrogen ion migration.
• The metal layer contains bit lines and dummy bit lines connected to the channel structures.
• The dummy contacts provide a path for hydrogen ions in the upper insulation layer.

Potential Applications: - Non-volatile memory devices - Semiconductor industry - Data storage applications

Problems Solved: - Enhanced memory cell structure - Improved hydrogen ion migration - Increased data storage efficiency

Benefits: - Higher memory cell performance - Enhanced data retention - Improved reliability

Commercial Applications: Title: Advanced Non-Volatile Memory Devices for Enhanced Data Storage This technology can be utilized in various commercial applications such as solid-state drives, memory cards, and other data storage devices. It can revolutionize the semiconductor industry by providing more efficient and reliable memory solutions.

Prior Art: Readers can explore prior art related to non-volatile memory devices, vertical channel structures, and hydrogen ion migration in semiconductor technologies to gain a deeper understanding of the innovation presented in this patent application.

Frequently Updated Research: Researchers are constantly working on improving non-volatile memory devices, exploring new materials, and optimizing memory cell structures for better performance and reliability.

Questions about Non-Volatile Memory Devices: 1. How does the structure of this non-volatile memory device differ from traditional memory devices? - The structure of this non-volatile memory device includes vertical channel structures and dummy contacts for hydrogen ion migration, which are not commonly found in traditional memory devices. 2. What advantages does the use of dummy contacts for hydrogen ion migration provide in this memory device? - The dummy contacts in this memory device facilitate the movement of hydrogen ions in the upper insulation layer, enhancing data retention and reliability.

Original Abstract Submitted

A non-volatile memory device may include a memory cell region and a peripheral circuit region positioned below the memory cell region in the vertical direction. The memory cell region may include a plurality of channel structures extending in a vertical direction, a first metal layer over the plurality of channel structures, a first capping layer over the first metal layer, a first upper insulation layer over the first capping layer, and at least one first dummy contact penetrating through the first capping layer. The first metal layer may include a plurality of bit lines and at least one dummy bit line. The bit lines may be respectively connected to the plurality of channel structures. The at least one first dummy contact may be on the at least one dummy bit line and may provide a migration path for hydrogen ions in the first upper insulation layer.