18474072. SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
Contents
- 1 SEMICONDUCTOR DEVICE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.9.1 Unanswered Questions
- 1.9.2 How does this technology compare to existing semiconductor device structures in terms of performance and reliability?
- 1.9.3 What are the potential challenges in scaling up the production of semiconductor devices using this technology for mass commercial applications?
- 1.10 Original Abstract Submitted
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Hyungsuk Jung of Suwon-si (KR)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18474072 titled 'SEMICONDUCTOR DEVICE
Simplified Explanation
The semiconductor device described in the patent application includes a substrate, lower electrodes, supporter layers, a dielectric layer, and an upper electrode. The lower electrodes consist of a first lower electrode and a second lower electrode, with at least one supporter layer in contact with the lower electrodes. The supporter layer includes a first supporter layer in contact with the first lower electrode's side surface, and the uppermost end of the second lower electrode is higher than the upper surface of the first supporter layer.
- Lower electrodes: The device includes a plurality of lower electrodes, each comprising a first lower electrode and a second lower electrode stacked on top of the first lower electrode.
- Supporter layers: At least one supporter layer is in contact with the lower electrodes, with a first supporter layer in contact with the side surface of the upper region of the first lower electrode.
- Dielectric layer: Positioned on the lower electrodes and supporter layers, the dielectric layer separates the lower electrodes from the upper electrode.
- Upper electrode: Located on top of the dielectric layer, the upper electrode completes the semiconductor device structure.
Potential Applications
The technology described in the patent application could be applied in various semiconductor devices, such as capacitors, sensors, and memory devices.
Problems Solved
This technology solves the problem of ensuring proper alignment and support of the lower electrodes within the semiconductor device, which can improve device performance and reliability.
Benefits
The benefits of this technology include enhanced device stability, improved electrical performance, and potentially increased device lifespan.
Potential Commercial Applications
The semiconductor device technology could find applications in the manufacturing of consumer electronics, telecommunications equipment, and automotive electronics.
Possible Prior Art
One possible prior art for this technology could be the use of supporter layers in semiconductor devices to improve electrode alignment and stability.
Unanswered Questions
How does this technology compare to existing semiconductor device structures in terms of performance and reliability?
The article does not provide a direct comparison between this technology and existing semiconductor device structures. Further research or testing may be needed to evaluate the performance and reliability differences.
What are the potential challenges in scaling up the production of semiconductor devices using this technology for mass commercial applications?
The article does not address the scalability of production using this technology. Factors such as cost, manufacturing processes, and compatibility with existing production lines could pose challenges that need to be explored further.
Original Abstract Submitted
A semiconductor device may include a substrate; a plurality of lower electrodes on the substrate; at least one supporter layer in contact with the plurality of lower electrodes; a dielectric layer on the plurality of lower electrodes and the at least one supporter layer; and an upper electrode on the dielectric layer. Each of the plurality of lower electrodes may include a first lower electrode and a second lower electrode on the first lower electrode. The at least one supporter layer may include a first supporter layer in contact with a side surface of an upper region of the first lower electrode. A level of an uppermost end of the second lower electrode may be higher than a level of an upper surface of the first supporter layer.
