18473750. SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND ELECTRONIC APPARATUS simplified abstract (Semiconductor Energy Laboratory Co., Ltd.)
Contents
- 1 SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND ELECTRONIC APPARATUS
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND ELECTRONIC APPARATUS - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND ELECTRONIC APPARATUS
Organization Name
Semiconductor Energy Laboratory Co., Ltd.
Inventor(s)
Kentaro Hayashi of Atsugi (JP)
Shunpei Yamazaki of Tokyo (JP)
SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND ELECTRONIC APPARATUS - A simplified explanation of the abstract
This abstract first appeared for US patent application 18473750 titled 'SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND ELECTRONIC APPARATUS
Simplified Explanation
The semiconductor device described in the patent application includes a capacitor, a transistor, and multiple insulating layers. The capacitor consists of two conductive layers separated by an insulating layer, while the transistor includes several conductive layers, a semiconductor layer, and additional insulating layers. The layers are arranged in a specific configuration to allow for miniaturization and high integration of the device.
- The semiconductor device includes a capacitor, a transistor, and multiple insulating layers.
- The capacitor is made up of two conductive layers separated by an insulating layer.
- The transistor consists of several conductive layers, a semiconductor layer, and additional insulating layers.
- The layers are arranged in a specific configuration to enable miniaturization and high integration of the device.
Potential Applications
The technology described in the patent application could be applied in various electronic devices such as smartphones, tablets, and wearable technology. It could also be used in medical devices, automotive electronics, and industrial equipment.
Problems Solved
This technology addresses the challenge of miniaturizing semiconductor devices while maintaining high integration levels. It also solves the problem of optimizing the performance of capacitors and transistors in a compact space.
Benefits
The benefits of this technology include increased efficiency, reduced size and weight of electronic devices, improved performance, and enhanced functionality. It also allows for cost-effective manufacturing processes and greater design flexibility.
Potential Commercial Applications
- "Semiconductor Device with Miniaturized Capacitor and Transistor Layers" could be used in the development of next-generation smartphones and tablets.
- This technology could also find applications in the automotive industry for advanced driver assistance systems and in the healthcare sector for medical devices.
Possible Prior Art
One possible prior art for this technology could be the development of miniaturized semiconductor devices with integrated capacitors and transistors in the field of microelectronics.
Unanswered Questions
How does the specific configuration of the layers contribute to the miniaturization and high integration of the semiconductor device?
The patent application provides details on the arrangement of the layers, but it does not explain the specific mechanisms through which this configuration enables miniaturization and high integration.
What are the potential limitations or challenges associated with implementing this technology in practical applications?
While the patent application highlights the benefits of the technology, it does not address any potential limitations or challenges that may arise during the implementation of this technology in real-world applications.
Original Abstract Submitted
A semiconductor device that can be miniaturized or highly integrated is provided. The semiconductor device includes a capacitor, a transistor, and a first insulating layer. The capacitor includes first and second conductive layers and a second insulating layer. The second insulating layer is in contact with a side surface of the first conductive layer, and the second conductive layer covers at least part of the side surface of the first conductive layer with the second insulating layer therebetween. The transistor includes third to fifth conductive layers, a semiconductor layer, and a third insulating layer. The third conductive layer is in contact with a top surface of the first conductive layer. The first insulating layer is provided over the third conductive layer, and the fourth conductive layer is provided over the first insulating layer. The first insulating layer and the fourth conductive layer include an opening portion reaching the third conductive layer. The semiconductor layer is in contact with the third and fourth conductive layers. The semiconductor layer includes a region positioned inside the opening portion. Over the semiconductor layer, the third insulating layer and the fifth conductive layer are provided in this order so as to each include a region positioned inside the opening portion.
