18473459. SUBSTRATE TREATMENT METHOD, SUBSTRATE TREATMENT APPARATUS, AND COMPUTER STORAGE MEDIUM simplified abstract (Tokyo Electron Limited)
Contents
- 1 SUBSTRATE TREATMENT METHOD, SUBSTRATE TREATMENT APPARATUS, AND COMPUTER STORAGE MEDIUM
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SUBSTRATE TREATMENT METHOD, SUBSTRATE TREATMENT APPARATUS, AND COMPUTER STORAGE MEDIUM - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.9.1 Unanswered Questions
- 1.9.2 How does this technology compare to existing methods for treating substrates with metal-containing resists in terms of cost-effectiveness and scalability?
- 1.9.3 What are the potential limitations or challenges in implementing this technology in industrial-scale semiconductor manufacturing processes?
- 1.10 Original Abstract Submitted
SUBSTRATE TREATMENT METHOD, SUBSTRATE TREATMENT APPARATUS, AND COMPUTER STORAGE MEDIUM
Organization Name
Inventor(s)
Shinichiro Kawakami of Koshi City (JP)
Kosuke Yoshihara of Koshi City (JP)
Satoru Shimura of Koshi City (JP)
Yuhei Kuwahara of Koshi City (JP)
Tomoya Onitsuka of Koshi City (JP)
Tetsunari Furusho of Koshi City (JP)
SUBSTRATE TREATMENT METHOD, SUBSTRATE TREATMENT APPARATUS, AND COMPUTER STORAGE MEDIUM - A simplified explanation of the abstract
This abstract first appeared for US patent application 18473459 titled 'SUBSTRATE TREATMENT METHOD, SUBSTRATE TREATMENT APPARATUS, AND COMPUTER STORAGE MEDIUM
Simplified Explanation
The substrate treatment method described in the abstract involves a series of heat treatments and a developing treatment to modify a metal-containing resist on a substrate with a coating film.
- First heat treatment is performed on the substrate with the metal-containing resist to form a precursor in the exposed region of the coating film.
- Second heat treatment is then carried out to condense the metal-containing resist formed into the precursor in the exposed region of the coating film.
- Finally, a developing treatment is performed on the substrate to complete the substrate treatment process.
Potential Applications
The technology described in this patent application could be applied in the semiconductor industry for the fabrication of microelectronic devices.
Problems Solved
This technology solves the problem of improving the performance and reliability of metal-containing resists used in the manufacturing of semiconductor devices.
Benefits
The benefits of this technology include enhanced precision and control in the formation of metal-containing resists, leading to improved quality and efficiency in semiconductor device production.
Potential Commercial Applications
- Semiconductor manufacturing industry: This technology can be utilized in the production of advanced semiconductor devices with higher performance and reliability.
Possible Prior Art
There may be prior art related to methods for treating substrates with metal-containing resists in the semiconductor industry, but specific examples are not provided in this patent application.
Unanswered Questions
How does this technology compare to existing methods for treating substrates with metal-containing resists in terms of cost-effectiveness and scalability?
This article does not provide information on the cost-effectiveness and scalability of the proposed substrate treatment method compared to existing methods.
What are the potential limitations or challenges in implementing this technology in industrial-scale semiconductor manufacturing processes?
The article does not address the potential limitations or challenges that may arise when implementing this technology in large-scale semiconductor manufacturing operations.
Original Abstract Submitted
A substrate treatment method includes: performing a first heat treatment on a substrate on which a coating film of a metal-containing resist has been formed and subjected to an exposure treatment, to form the metal-containing resist into a precursor in an exposed region of the coating film; thereafter, performing a second heat treatment on the substrate to condense the metal-containing resist formed into the precursor in the exposed region of the coating film; and thereafter, performing a developing treatment on the substrate.
