18472777. INTEGRATED CIRCUIT DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
Contents
INTEGRATED CIRCUIT DEVICE
Organization Name
Inventor(s)
Hanyoung Song of Suwon-si (KR)
INTEGRATED CIRCUIT DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18472777 titled 'INTEGRATED CIRCUIT DEVICE
The abstract describes an integrated circuit device with two fin-type active regions, each with a gate line extending in different lateral directions and a gate cut insulating pattern between them. The width of the gate line adjacent to the gate cut insulating pattern is narrower than other portions.
- The integrated circuit device features two fin-type active regions on a substrate, each with a gate line extending in different lateral directions.
- A gate cut insulating pattern separates the gate lines, with one portion of the gate line being narrower near the insulating pattern.
- This design allows for precise control and modulation of the electrical properties of the active regions.
Potential Applications:
- This technology can be used in advanced semiconductor devices such as high-performance transistors.
- It can also be applied in memory devices, logic circuits, and other integrated circuits requiring precise gate control.
Problems Solved:
- Provides improved performance and efficiency in semiconductor devices.
- Enables better integration of multiple components on a single chip.
Benefits:
- Enhanced functionality and performance of integrated circuits.
- Increased efficiency and reliability in semiconductor devices.
Commercial Applications:
- This technology has significant implications for the semiconductor industry, particularly in the development of advanced processors and memory chips.
Questions about the technology: 1. How does the width variation in the gate lines impact the overall performance of the integrated circuit device? 2. What are the specific advantages of using fin-type active regions in semiconductor devices compared to other designs?
Original Abstract Submitted
An integrated circuit device includes a first fin-type active region and a second fin-type active region extending in a first lateral direction on a substrate, a first gate line extending in a second lateral direction intersecting the first lateral direction on the first fin-type active region, a second gate line apart from the first gate line in the second lateral direction on the second fin-type active region and extending along an extension line of the first gate line in the second lateral direction, and a gate cut insulating pattern between the first gate line and the second gate line, wherein, for at least one of the first gate line and the second gate line, a width of a terminal gate portion, which is adjacent to the gate cut insulating pattern, in the first lateral direction is less than a width of another portion in the first lateral direction.
