18471463. SILICON CARBIDE WAFER AND SILICON CARBIDE SEMICONDUCTOR DEVICE INCLUDING THE SAME simplified abstract (DENSO CORPORATION)
Contents
SILICON CARBIDE WAFER AND SILICON CARBIDE SEMICONDUCTOR DEVICE INCLUDING THE SAME
Organization Name
Inventor(s)
Hideyuki Uehigashi of Nisshin-shi (JP)
SILICON CARBIDE WAFER AND SILICON CARBIDE SEMICONDUCTOR DEVICE INCLUDING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18471463 titled 'SILICON CARBIDE WAFER AND SILICON CARBIDE SEMICONDUCTOR DEVICE INCLUDING THE SAME
The abstract of the patent application describes a silicon carbide wafer with a substrate and an epitaxial layer, both made of silicon carbide. The concentration of carbon vacancies decreases continuously from the substrate towards the epitaxial layer, with the substrate having a concentration of 3.0×10^15 cm^-3 or more.
- The silicon carbide wafer consists of a substrate and an epitaxial layer, both made of silicon carbide.
- The concentration of carbon vacancies decreases from the substrate towards the epitaxial layer.
- The substrate has a concentration of carbon vacancies of 3.0×10^15 cm^-3 or more.
Potential Applications: - High-power electronic devices - High-temperature applications - Semiconductor industry
Problems Solved: - Improved performance of electronic devices - Enhanced thermal stability - Increased efficiency in high-temperature environments
Benefits: - Higher reliability in extreme conditions - Improved overall device performance - Extended lifespan of electronic components
Commercial Applications: Title: Silicon Carbide Wafers for High-Power Electronics This technology can be used in the production of high-power electronic devices for various industries, including aerospace, automotive, and telecommunications. The market implications include increased efficiency and reliability of electronic systems.
Questions about Silicon Carbide Wafers: 1. How does the concentration of carbon vacancies impact the performance of electronic devices? 2. What are the potential cost savings associated with using silicon carbide wafers in high-power applications?
Frequently Updated Research: Ongoing research focuses on optimizing the manufacturing process of silicon carbide wafers to further enhance their performance and reliability in high-power electronic devices.
Original Abstract Submitted
A silicon carbide wafer includes a substrate made of silicon carbide and an epitaxial layer made of silicon carbide and disposed on the substrate. A concentration of carbon vacancies in the substrate and the epitaxial layer continuously decreases from the substrate toward the epitaxial layer. The concentration of the carbon vacancies in the substrate is 3.0×10cmor more.
